Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication.

Metal-halide perovskites are promising lasing materials for the realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low-temperature processing, leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through the costly and inefficient hybrid integration of III-V semiconductors. Until now, however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography (and, therefore, on existing semiconductor manufacturing infrastructure) has been established.

Graphene based on-chip variable optical attenuator operating at 855 nm wavelength.

This work reports on the fabrication and characterization of a graphene based variable optical attenuator integrated on a photonic SiN waveguide and operating at 855 nm wavelength. The variable optical attenuator utilizes the gate voltage dependent optical absorption of a graphene layer, located in the evanescent field of the waveguide. A maximum attenuation of 17 dB is obtained at -3 V gate voltages for a device length of 700 µm.

Integrated perovskite lasers on a silicon nitride waveguide platform by cost-effective high throughput fabrication.

Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of efficient photonic devices. In this work, we demonstrate the first successful integration of a perovskite laser onto a silicon nitride photonic chip. High throughput, low cost optical lithography is used, followed by indirect structuring of the perovskite waveguide.