Measurement of the refractive index dispersion of As2Se3 bulk glass and thin films prior to and after laser irradiation and annealing using prism coupling in the near- and mid-infrared spectral range.

The prism coupling technique has been utilized to measure the refractive index in the near- and mid-IR spectral region of chalcogenide glasses in bulk and thin film form. A commercial system (Metricon model 2010) has been modified with additional laser sources, detectors, and a new GaP prism to allow the measurement of refractive index dispersion over the 1.5-10.

Integrated chalcogenide waveguide resonators for mid-IR sensing: leveraging material properties to meet fabrication challenges.

In this paper, attributes of chalcogenide glass (ChG) based integrated devices are discussed in detail, including origins of optical loss and processing steps used to reduce their contributions to optical component performance. Specifically, efforts to reduce loss and tailor optical characteristics of planar devices utilizing solution-based glass processing and thermal reflow techniques are presented and their results quantified. Post-fabrication trimming techniques based on the intrinsic photosensitivity of the chalcogenide glass are exploited to compensate for fabrication imperfections of ring resonators.

Resonant cavity-enhanced photosensitivity in As2S3 chalcogenide glass at 1550 nm telecommunication wavelength.

We report the first (to our knowledge) experimental observation of resonant cavity-enhanced photosensitivity in As(2)S(3) chalcogenide glass film at 1550 nm telecommunication wavelength. The measured photosensitivity threshold is <0.1 GW/cm(2), and a photoinduced refractive index increase as large as 0.

Optical loss reduction in high-index-contrast chalcogenide glass waveguides via thermal reflow.

A thermal reflow technique is applied to high-index-contrast, sub-micron waveguides in As(2)S(3) chalcogenide glass to reduce the sidewall roughness and associated optical scattering loss. We show that the reflow process effectively decreases sidewall roughness of chalcogenide glass waveguides. A kinetic model is presented to quantitatively explain the sidewall roughness evolution during thermal reflow.

Femtosecond laser photo-response of Ge23Sb7S70 films.

Ternary chalcogenide glass films from identical parent bulk glasses were prepared by thermal evaporation (TE) and pulsed laser deposition (PLD) and subjected to 810-nm femtosecond laser exposure at both kHz and MHz repetition rates. The exposure-induced modification on the glass film's surface profile, refractive index, and structural properties were shown to be a function of laser irradiance, the number of laser pulses per focal spot, and repetition rate. Film response was shown to be related to deposition technique-related density and the number of glass bonds within the irradiated focal volume.

Planar waveguide-coupled, high-index-contrast, high-Q resonators in chalcogenide glass for sensing.

High-index-contrast compact microdisk resonators in thermally evaporated As2S3 and Ge17Sb12S71 chalcogenide glass films are designed and fabricated using standard UV lithography and characterized. Our pulley coupler configuration demonstrates coupling of the resonators to monolithically integrated photonic wire waveguides without resorting to demanding fine-line lithography. Microdisk resonators in As2S3 support whispering-gallery-mode with cavity quality factors (Q) exceeding 2 x 10(5), the highest Q value reported in resonator structures in chalcogenide glasses to the best of our knowledge.

Demonstration of chalcogenide glass racetrack microresonators.

We have demonstrated what we believe to be the first chalcogenide glass racetrack microresonator using a complementary metal-oxide semiconductor-compatible lift-off technique with thermally evaporated As(2)S(3) films. The device simultaneously features a small footprint of 0.012 mm x 0.

Low-loss high-index-contrast planar waveguides with graded-index cladding layers.

We experimentally demonstrate, for the first time, propagation loss reduction via graded-index (GRIN) cladding layers in high-index-contrast (HIC) glass waveguides. We show that scattering loss arising from sidewall roughness can be significantly reduced without compromising the high-index-contrast condition, by inserting thin GRIN cladding layers with refractive indices intermediate between the core and topmost cover of a strip waveguide. Loss as low as 1.

Si-CMOS-compatible lift-off fabrication of low-loss planar chalcogenide waveguides.

We demonstrate, for the first time to the best of our knowledge, low-loss, Si-CMOS-compatible fabrication of single-mode chalcogenide strip waveguides. As a novel route of chalcogenide glass film patterning, lift-off allows several benefits: leverage with Si-CMOS process compatibility; ability to fabricate single-mode waveguides with core sizes down to submicron range; and reduced sidewall roughness. High-index-contrast Ge(23)Sb(7)S(70) strip waveguides have been fabricated using lift-off with excellent uniformity of loss propagation and the lowest loss figure of reported to date.

Fabrication and testing of planar chalcogenide waveguide integrated microfluidic sensor.

We have fabricated and tested, to the best of our knowledge, the first microfluidic device monolithically integrated with planar chalcogenide glass waveguides on a silicon substrate. High-quality Ge(23)Sb(7)S(70) glass films have been deposited onto oxide coated silicon wafers using thermal evaporation, and high-index-contrast channel waveguides have been defined using SF(6) plasma etching. Microfluidic channel patterning in photocurable resin (SU8) and channel sealing by a polydimethylsiloxane (PDMS) cover completed the device fabrication.

Raman gain measurements and photo-induced transmission effects of germanium- and arsenic-based chalcogenide glasses.

The Raman gain spectra of millimeter thick As(2)S(3) and As(24)S(38)Se(38) glasses and Ge((23 - x))Ga(x)Sb(7)S((70 - y))Se(y) with x = 0 and 5 and y = 0, 2, 5 have been measured using a direct nonlinear optics technique. The pump light originated from a picosecond Nd:YAG laser operating at 1064 nm and a tunable optical parametric generator and amplifier (OPG/OPA) was used as a source for the probe light. A peak material Raman gain coefficient of (155 +/- 11) x 10(-13) m/W has been measured for the As(24)S(38)Se(38) glass.

Nonlinear optical properties of glasses in the system Ge/Ga-Sb-S/Se.

We report n2 measurements of selected chalcogenide glasses using a modified Z-scan technique. Measurements were made with picosecond pulses emitted by a 10 Hz Q-switched, mode-locked Nd:YAG laser at 1064 nm under conditions suitable to characterize ultrafast nonlinearities. The nonlinear index increases significantly up to 246 times the n2 for fused silica with an increase of SbS3 units and also very slightly with the replacement of Ge by Ga or S by Se.