Internally Harmonic Matched Compact GaN Power Amplifier with 78.5% PAE for 2.45 GHz Wireless Power Transfer Systems.

In this paper, a high-efficiency compact power amplifier is designed and fabricated with a 0.25 μm GaN high electron mobility transistor (HEMT) to meet the demands of a high integration level and high efficiency for microwave wireless power transfer (WPT) systems. The proposed power amplifier (PA) is implemented using an internally matched method to achieve a compact circuit size.