Bimetallic Alloys b-AsP at High Concentration Differences: Ideal for Photonic Devices.

Black arsenic phosphorus (b-AsP) is expected to be one of the primary materials for future photonic devices. However, the -factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, AsP switches from a direct band gap semiconductor to an indirect band gap one at = 0.