A Novel Isolation Approach for GaN-Based Power Integrated Devices.

This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with minimal losses and enhanced stability. A significant challenge in this technology is ensuring electrical isolation between the two types of devices.

High pressure behaviour of the organic semiconductor salt (TTF-BTD)I.

This study focuses on the effect of structure compression and cooling on the stereoelectronic properties of the planar π-conjugated TTF-BTD (TTF = tetrathiafulvalene; BTD = 2,1,3-benzothiadiazole) molecule, a prototypical example in which an electron-donor moiety is compactly annulated to an electron-acceptor moiety. Its partially oxidised iodine salt (TTF-BTD)I is a crystalline semiconductor featuring segregated columns of TTF units stacked alternating short and long π-π interactions. We studied TTF-BTD at temperatures ranging from 300 K to 90 K and at pressures up to 7.