Publications by authors named "Calvin Xiu Xian Lee"
A scalable (<130 nm) resistive switching memristor that features both filamentary and interfacial switching aimed at neuromorphic computing is developed in this study. The typically perceived noise or volatility was effectively harnessed as a controlled mechanism for interfacial switching. The multilayer structure for the proposed memristor enhances switching stability by curbing ionic overmigration and mitigating leakage paths.
View Article and Find Full Text PDFThe forefront of neuromorphic research strives to develop devices with specific properties, , linear and symmetrical conductance changes under external stimuli. This is paramount for neural network accuracy when emulating a biological synapse. A parallel exploration of resistive memory as a replacement for conventional computing memory ensues.
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- - Spiking neural networks (SNNs) are being explored for their efficiency in processing complex temporal information, resembling biological brains, but traditional two-terminal memristors struggle with programming issues.
- - A new three-terminal memristor (3TM) has been developed that mimics both synaptic and neuronal functions, showing capabilities like short-term plasticity and learning behaviors with reduced power during relearning.
- - This 3TM can replicate leaky-integrate-and-fire neuron behavior without needing extra components, making it a promising solution for more effective hardware implementations of SNNs.
Emerging technologies, i.e., spintronics, 2D materials, and memristive devices, have been widely investigated as the building block of neuromorphic computing systems.
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- The effectiveness of a one selector-one RRAM crossbar array is largely influenced by how nonlinear the selector device is.
- A study found that the nonlinearity of Pt/TiO/Pt selectors increases when there are fewer oxygen vacancies, which can be controlled by the sputtering pressure during manufacturing.
- The conduction mechanisms in the Pt/TiO/Pt structure change from Schottky emission to Poole-Frenkel emission as sputtering pressure increases, indicating higher oxygen vacancy levels, while lower defect density also enhances the selector's performance.