Publications by authors named "Calvin Tagne-Kaegom"

Article Synopsis
  • Ferroelectric Rashba semiconductors (FERSCs) like α-GeTe are key for developing advanced energy-efficient technologies focusing on spin-orbit coupling (SOC), a field known as spin-orbitronics.
  • This study explores how the Rashba-SOC effect in α-GeTe films behaves as they become thinner, revealing that even at a thickness of just 1 nm, these films maintain a strong Rashba effect, measured to be 5.2 ± 0.5 eV·Å.
  • The research employs angle-resolved photoemission spectroscopy (ARPES) and x-ray photoemission spectroscopy (XPS) to show that the presence of Sb atoms compensates for defects in the GeTe films
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Epitaxial growth of WTe offers significant advantages, including the production of high-quality films, possible long-range in-plane ordering, and precise control over layer thicknesses. However, the mean island size of WTe grown by molecular beam epitaxy (MBE) in the literature is only a few tens of nanometers, which is not suitable for the implementation of devices at large lateral scales. Here we report the growth of T -WTe ultrathin films by MBE on monolayer (ML) graphene, reaching a mean flake size of ≃110 nm, which is, on overage, more than three times larger than previous results.

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