Flexible High-Temperature MoS Field-Effect Transistors and Logic Gates.

High-temperature-resistant integrated circuits with excellent flexibility, a high integration level (nanoscale transistors), and low power consumption are highly desired in many fields, including aerospace. Compared with conventional SiC high-temperature transistors, transistors based on two-dimensional (2D) MoS have advantages of superb flexibility, atomic scale, and ultralow power consumption. However, MoS cannot survive at high temperature and drastically degrades above 200 °C.