Publications by authors named "Caixin Hui"
Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT.
Materials (Basel)
February 2023
This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. It was found that different kinds of stress had different influence mechanisms on the device.
View Article and Find Full Text PDFThe Electrical and Thermal Characteristics of Stacked GaN MISHEMT.
Micromachines (Basel)
November 2022
Article Synopsis
- - A study was conducted on a double-layer stacked GaN MISHEMTs structure to evaluate its electro-thermal characteristics and heat transfer, comparing its performance to single-layer designs.
- - The double-layer GaN MISHEMTs showed an output current that was twice that of the single-layer version at room temperature, though the off-state current was higher, and both types had similar threshold voltages.
- - The research also examined how temperature affects performance; as the temperature rose from room temperature to 150 °C, there was a negative shift in threshold voltage, a decrease in output current, and an increase in off-state current, leading to the development of a thermal resistance network model that accurately predicts temperature distribution with less than