Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/SbTe/Ag heterojunctions.

In this study, bipolar memristive behaviors were systematically characterized in Ag/Sb2Te3/Ag hetero-junctions. By using in situ Raman and photoluminescence spectroscopy, a direct observation of the bonding environment and band structure confirmed that resistive switches are strongly related to the electronic valence changes in Sb2Te3 and the formation of Schottky barriers at Ag/Sb2Te3 interfaces. Band movement of Sb2Te3 acquired by first-principles calculations also supports the electrostatic barrier charging as a memristive mechanism of Ag/Sb2Te3/Ag heterocells.

The ambipolar evolution of a high-performance WSe transistor assisted by a ferroelectric polymer.

In recent years, the electrical characteristics of WSe field-effect transistors (FETs) have been widely investigated with various dielectrics. Among them, being able to perfectly tune the polarity of WSe is meaningful and promising work. In this work, we systematically study the electrical properties of bilayer WSe FETs modulated by ferroelectric polymer poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)).