Photodetectors integrating waveguides and semiconductor materials.

Photodetectors integrating substrates and semiconductor materials are increasingly attractive for applications in optical communication, optical sensing, optical computing, and military owing to the unique optoelectronic properties of semiconductor materials. However, it is still a challenge to realize high-performance photodetectors by only integrating substrates and semiconductor materials because of the limitation of incident light in contact with sensitive materials. In recent years, waveguides such as silicon (Si) and silicon nitride (SiN) have attracted extensive attention owing to their unique optical properties.

Two-dimensional molybdenum ditelluride waveguide-integrated near-infrared photodetector.

Low-cost, small-sized, and easy integrated high-performance photodetectors for photonics are still the bottleneck of photonic integrated circuits applications and have attracted increasing attention. The tunable narrow bandgap of two-dimensional (2D) layered molybdenum ditelluride (MoTe) from ∼0.83 to ∼1.