Transport gap in SmB protected against disorder.

The inverted resistance method was used in this study to extend the bulk resistivity of [Formula: see text] to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic thermally activated behavior that changes ∼7-10 orders of magnitude, suggesting that [Formula: see text] is an ideal insulator that is immune to disorder.

Characterization of dense arrays of chemiresistor vapor sensors with submicrometer features and patterned nanoparticle interface layers.

The performance of arrays of small, densely integrated chemiresistor (CR) vapor sensors with electron-beam patterned interface layers of thiolate-monolayer-protected gold nanoparticles (MPNs) is explored. Each CR in the array consists of a 100-μm(2) interdigital electrode separated from adjacent devices by 4 μm. Initial studies involved four separate arrays, each containing four CRs coated with one of four different MPNs, which were calibrated with five vapors before and after MPN-film patterning.