Sequential Infiltration Synthesis of AlO in PMMA Thin Films: Temperature Investigation by Operando Spectroscopic Ellipsometry.

Sequential infiltration synthesis (SIS) is a scalable and valuable technique for the synthesis of organic-inorganic materials with several potential applications at the industrial level. Despite the increasing interest for this technique, a clear picture of the fundamental physicochemical phenomena governing the SIS process is still missing. In this work, infiltration of AlO into thin poly(methyl methacrylate) (PMMA) films using trimethyl aluminum (TMA) and HO as precursors is investigated by operando dynamic spectroscopic ellipsometry (SE) analysis.

BiTeSe and SbTe heterostructure based photodetectors with high responsivity and broadband photoresponse: experimental and theoretical analysis.

Topological insulators have emerged as one of the most promising candidates for the fabrication of novel electronic and optoelectronic devices due to the unique properties of nontrivial Dirac cones on the surface and a narrow bandgap in the bulk. In this work, the SbTe and BiTeSe materials, and their heterostructure are fabricated by metal-organic chemical vapour deposition and evaporation techniques. Photodetection of these materials and their heterostructure shows that they detect light in a broadband range of 600 to 1100 nm with maximum photoresponse of SbTe, BiTeSe and SbTe/BiTeSe at 1100, 1000, and 1000 nm, respectively.

Sequential Infiltration Synthesis of AlO in Biodegradable Polybutylene Succinate: Characterization of the Infiltration Mechanism.

The introduction of inorganic materials into biopolymers has been envisioned as a viable option to modify the optical and structural properties of these polymers and promote their exploitation in different application fields. In this work, the growth of AlO in freestanding ∼30-μm-thick poly(butylene succinate) (PBS) films by sequential infiltration (SIS) at 70 °C via trimethylaluminum (TMA) and HO precursors was investigated for the first time. The incorporation of AlO into the PBS matrix was clearly demonstrated by XPS analysis and SEM-EDX cross-sectional images showing a homogeneous AlO distribution inside the PBS films.

Interface Analysis of MOCVD Grown GeTe/SbTe and Ge-Rich Ge-Sb-Te/SbTe Core-Shell Nanowires.

Controlling material thickness and element interdiffusion at the interface is crucial for many applications of core-shell nanowires. Herein, we report the thickness-controlled and conformal growth of a SbTe shell over GeTe and Ge-rich Ge-Sb-Te core nanowires synthesized via metal-organic chemical vapor deposition (MOCVD), catalyzed by the Vapor-Liquid-Solid (VLS) mechanism. The thickness of the SbTe shell could be adjusted by controlling the growth time without altering the nanowire morphology.

Improving HfO-Based Resistive Switching Devices by Inserting a TaO Thin Film via Engineered In Situ Oxidation.

Resistive switching (RS) devices with binary and analogue operation are expected to play a key role in the hardware implementation of artificial neural networks. However, state of the art RS devices based on binary oxides (e.g.