Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: an ab initio investigation.

The interaction between oxygen vacancies and La atoms in the La doped HfO(2) dielectric were studied using first principles total energy calculations. La dopants in the vicinity of a neutral oxygen vacancy (V(O)) show lower formation energy compared to the La defects far from V(O) centres. La doping in HfO(2) leads to the shift of the defect states of oxygen vacancies towards the conduction band edge.

k-Restoring processes at carbon depleted ultralow-k surfaces.

In this study we investigate the silylation of OH groups with different silazanes. In particular we use density functional theory and the nudged elastic band method to study the different reaction mechanisms. For the silylation reaction of hexamethyldisilazane and trimethylaminosilane with silanol, the minimum energy paths as well as the activation and reaction energies are discussed in detail.

The diode behavior of asymmetrically ordered Au55 clusters.

Future nanoelectronic devices may well be based on an assembled monolayer of ligand-stabilized metal clusters, Au55 in this case: Irradiation of the monolayer with an electon beam generates diodic behavior. While the clusters themselves resist decomposition, the system exhibits interesting time-dependant electrical characteristics, as shown by the current-voltage curve.

Maximum detection with a two-dimensional optoelectronic p-n-p-n winner-take-all network.

An optoelectronic p-n-p-n winner-take-all network is presented that can identify the location of the maximum intensity in two-dimensional spatially distributed light. An input pattern of illumination is incident upon an array of p-n-p-n devices that are connected in parallel to a common load resistor and therefore have identical voltage biases. If the light intensity at one or several elements exceeds a threshold value, only one p-n-p-n element stays on and emits light when the input light pattern is turned off.