Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy.

Gallium phosphide (GaP) is a III-V semiconductor with remarkable optoelectronic properties, and it has almost the same lattice constant as silicon (Si). However, to date, the monolithic and large-scale integration of GaP devices with silicon remains challenging. In this study, we present a nanoheteroepitaxy approach using gas-source molecular-beam epitaxy for selective growth of GaP islands on Si nanotips, which were fabricated using complementary metal-oxide semiconductor (CMOS) technology on a 200 mm n-type Si(001) wafer.

Preliminary biomechanical cadaver study investigating a new load-sharing knee implant.

Purpose: One of the major contributors to the progression of knee osteoarthritis (OA) is the condition of loading in the knee joint. Innovatively designed load-sharing implants may be effective in terms of reducing joint load. The effects of these implants on contact joint mechanics can be evaluated through cadaver experiments.

Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency.

Despite the high density of threading dislocations generally found in (AlGaIn)N heterostructures, the light emission efficiency of such structures is exceptionally high. It has become common to attribute the high efficiency to compositional fluctuations or even phase separation in the active GaInN quantum well region. The resulting localization of charge carriers is thought to keep them from recombining nonradiatively at the defects.

[A personal computer assessment program for increased risk in life insurance].

The computer aided underwriting procedure means a substantial progress compared to the classical method. It enables less skilled people to rate substandard risks within specific limits. All important data will be saved automatically and can be retrieved for statistical or other analysis.