A hybrid electroabsorption modulator device for generation of high spectral-efficiency optical modulation formats.

We report a novel hybrid integrated optic device consisting of AlGaInAs/InP electroabsorption modulators and a four-arm silica-on-silicon planar lightwave circuit optical interferometer. The device is designed for generation of high spectral efficiency optical modulation formats. We demonstrate generation of 21.

Amplitude and phase modulation by free-carrier injection in III-V semiconducting waveguides for the 10.6-microm wavelength.

We give experimental results for amplitude and phase modulation by free-carrier injection in planar and rib waveguides at a wavelength of 10.6 microm. These waveguides have been formed by metal-organic chemical-vapor deposition of InP and GalnAs layers on InP substrates.