Publications by authors named "C Gatel"
Article Synopsis
- Interfaces in heterostructures significantly affect the operation of electronic devices, impacting elements like capacitors and transistors used for memory and logic applications.
- The study uses operando off-axis electron holography to measure trapped charges at dielectric and metal/dielectric interfaces in HfO- and AlO-based nanocapacitors under applied electric fields.
- The findings reveal a high density of trapped charges at these interfaces that influences the device's electric field distribution, establishing a linear relationship between trapped charges and the applied bias for the first time.
The possibility of automatically aligning the transmission electron microscope (TEM) is explored using an approach based on artificial intelligence (AI). After presenting the general concept, we test the method on the first step of the alignment process which involves centering the condenser aperture. We propose using a convolutional neural network (CNN) that learns to predict the x and y-shifts needed to realign the aperture in one step.
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- Electrical resistivity is crucial in the performance of nanoscale devices like memristors and phase-change memories, where local resistivity is tailored for specific functions.
- Phase-change memories depend on materials that exhibit a significant increase in electrical resistance when transitioning between crystalline and amorphous states.
- The study introduces a new approach using electron holography to measure local resistance in devices, revealing that resistance variations occur at a scale of just a few nanometers during operation.
Article Synopsis
- The MnAlC alloy, which doesn't contain rare earth materials, is being recognized as a promising and affordable option for permanent magnets due to its high anisotropy field, saturation magnetization, and Curie temperature.
- A simple fabrication method was developed to produce a bulk -MnAlC magnet, utilizing electric arc-melting and a two-step heat treatment to achieve a pure -MnAlC ingot.
- The resulting -MnAlC showed improved magnetic properties with a remanent magnetization of 42 Am/kg and a maximum energy product of 6.07 kJ/m, surpassing previous results and demonstrating high-quality ferromagnetic behavior.
The metal-oxide-semiconductor (MOS) capacitor is one of the fundamental electrical components used in integrated circuits. While much effort is currently being made to integrate new dielectric or ferroelectric materials, capacitors of silicon dioxide on silicon remain the most prevalent. It is perhaps surprising therefore that the electric field within such a capacitor has never been measured, or mapped out, at the nanoscale.
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