Characterization of surface modifications by white light interferometry: applications in ion sputtering, laser ablation, and tribology experiments.

In materials science and engineering it is often necessary to obtain quantitative measurements of surface topography with micrometer lateral resolution. From the measured surface, 3D topographic maps can be subsequently analyzed using a variety of software packages to extract the information that is needed. In this article we describe how white light interferometry, and optical profilometry (OP) in general, combined with generic surface analysis software, can be used for materials science and engineering tasks.

Measuring the roughness of buried interfaces by sputter depth profiling.

We report results of high-resolution sputter depth profiling of an alternating MgO/ZnO nanolayer stack grown by atomic layer deposition (ALD) of ≈5.5 nm per layer. We used an improved dual beam time-of-flight secondary ion mass spectrometer to measure (24)Mg(+) and (64)Zn(+) intensities as a function of sample depth.

High-resolution secondary ion mass spectrometry depth profiling of nanolayers.

Rationale: Although the fundamental physical limits for depth resolution of secondary ion mass spectrometry are well understood in theory, the experimental work to achieve and demonstrate them is still ongoing. We report results of high-resolution TOF SIMS (time-of-flight secondary ion mass spectrometry) depth profiling experiments on a nanolayered structure, a stack of 16 alternating MgO and ZnO ~5.5 nm layers grown on a Si substrate by atomic layer deposition.

Ion microscopy with resonant ionization mass spectrometry: time-of-flight depth profiling with improved isotopic precision.

There are four generally mutually exclusive requirements that plague many mass spectrometric measurements of trace constituents: (1) the small size (limited by the depth probed) of many interesting materials requires high useful yields to simply detect some trace elements, (2) the low concentrations of interesting elements require efficient discrimination from isobaric interferences, (3) it is often necessary to measure the depth distribution of elements with high surface and low bulk contributions, and (4) many applications require precise isotopic analysis. Resonant ionization mass spectrometry has made dramatic progress in addressing these difficulties over the past five years.