Publications by authors named "C Bruce Wenger"

Ultrathin atomic layer deposited ceria films (< 20 nm) are capable of H2 heterolytic activation at room temperature, undergoing a significant reduction regardless of the absolute pressure, as measured under in-situ conditions by near ambient pressure X-ray photoelectron spectroscopy. ALD-ceria can gradually reduce as a function of H2 concentration under H2/O2 environments, especially for diluted mixtures below 10%. At room temperature, this reduction is limited to the surface region, where the hydroxylation of the ceria surface induces a charge transfer towards the ceria matrix, reducing Ce4+ cations to Ce3+.

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In this work, we present the monolithic integration of a TiN nanohole array and a Ge photodetector towards a CMOS compatible fabrication of a refractive index sensor in a 200 mm wafer silicon technology. We developed a technology process that enables fabrication with high yields of around 90%. Ge photodetectors with a Ge layer thickness of 450 nm and an area of 1600 µm (40 µm x 40 µm) show dark current densities of around 129 mA/cm and responsivities of 0.

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Background: Hyperlipidemia is a major cardiovascular disease (CVD) risk factor, but limited data on its mortality trends in CVD over time. We assessed annual hyperlipidemia-related CVD mortality trends in the United States, including the COVID-19 pandemic's impact.

Methods And Results: Mortality data were obtained from CDC repository between 1999 and 2020 among patients ≥15 years old, using ICD-10 codes hyperlipidemia (E78.

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Article Synopsis
  • Resistive Random Access Memory (RRAM) is being researched for its benefits in energy efficiency and non-volatility, but designing effective systems is complex and time-consuming for material and device scientists.
  • There's a need for a user-friendly modeling framework that helps researchers evaluate device performance early in the design process, focusing on speed, accuracy, and adaptability.
  • This paper presents a digital twin (DT)-like framework that generates RRAM device models from measurement data, includes peripheral circuits for better evaluations, and demonstrates its effectiveness in applications like neural network processing of ECG data and Fault Aware Training.
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The drift characteristics of valence change memory (VCM) devices have been analyzed through both experimental analysis and 3D kinetic Monte Carlo (kMC) simulations. By simulating six distinct low-resistance states (LRS) over a 24-hour period at room temperature, we aim to assess the device temporal stability and retention. Our results demonstrate the feasibility of multi-level operation and reveal insights into the conductive filament (CF) dynamics.

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