Selective area molecular beam epitaxy of InSb on InP(111): from thin films to quantum nanostructures.

InSb is a material of choice for infrared as well as spintronic devices but its integration on large lattice mismatched semi-insulating III-V substrates has so far altered its exceptional properties. Here, we investigate the direct growth of InSb on InP(111)substrates with molecular beam epitaxy. Despite the lack of a thick metamorphic buffer layer for accommodation, we show that quasi-continuous thin films can be grown using a very high Sb/In flux ratio.

Synthesis of an Ethylenediaminetetraacetic Acid-like Ligand Based on Sucrose Scaffold and Complexation and Proton Relaxivity Studies of Its Gadolinium(III) Complex in Solution.

Sucrose constitutes a non-toxic, biodegradable, low-cost and readily available natural product. To expand its utility, we developed total synthesis for a ligand based on a sucrose scaffold for potential use as a metal chelation agent. The designed target (compound ) has a metal-chelating functionality at both the C-6 and C-6' positions, which can provide a first coordination sphere of eight valencies.

Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate.

Semiconductor nanowires (NWs) are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique.

InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy.

Increasing quantum confinement in semiconductor quantum dot (QD) systems is essential to perform robust simulations of many-body physics. By combining molecular beam epitaxy and lithographic techniques, we developed an approach consisting of a twofold selective area growth to build QD chains. Starting from 15 nm-thick and 65 nm-wide in-plane InGaAs nanowires on InP substrates, linear arrays of InGaAs QDs were grown on top, with tunable lengths and separations.