Comparative analysis of scalp and gut microbiome in androgenetic alopecia: A Korean cross-sectional study.

Androgenetic alopecia (AGA) is a non-scarring and progressive form of hair loss occurring in both men and women. Although genetic predisposition and sex steroid hormones are the main causes, many factors remain unknown, and various extrinsic factors can negatively affect the lifespan of hair. We investigated skin-gut axis microorganisms as potential exogenous factors causing AGA, through comparative analyses of the scalp and gut microbiome in individuals with and without AGA in a Korean cohort.

A Genome-Wide Association Study and Machine-Learning Algorithm Analysis on the Prediction of Facial Phenotypes by Genotypes in Korean Women.

Purpose: Changes in facial appearance are affected by various intrinsic and extrinsic factors, which vary from person to person. Therefore, each person needs to determine their skin condition accurately to care for their skin accordingly. Recently, genetic identification by skin-related phenotypes has become possible using genome-wide association studies (GWAS) and machine-learning algorithms.

MED28 Over-Expression Shortens the Cell Cycle and Induces Genomic Instability.

The mammalian mediator complex subunit 28 (MED28) is overexpressed in a variety of cancers and it regulates cell migration/invasion and epithelial-mesenchymal transition. However, transcription factors that increase MED28 expression have not yet been identified. In this study, we performed a luciferase reporter assay to identify and characterize the prospective transcription factors, namely E2F transcription factor 1, nuclear respiratory factor 1, E-26 transforming sequence 1, and CCAAT/enhancer-binding protein β, which increased MED28 expression.

Keratoameloblastoma: a case report and a review of the literature on its radiologic features.

Keratoameloblastoma is a rare subtype of ameloblastoma. It tends to have a poor prognosis, and therefore a careful diagnosis based on imaging is important in planning appropriate surgical treatment for this distinctive type of ameloblastoma. A unique feature of keratoameloblastoma is atypical calcification inside the mass, such as a ground-glass appearance, internal calcification, or a mixed radiolucent and radiopaque pattern.

Analysis of physiological signals for recognition of boredom, pain, and surprise emotions.

Background: The aim of the study was to examine the differences of boredom, pain, and surprise. In addition to that, it was conducted to propose approaches for emotion recognition based on physiological signals.

Methods: Three emotions, boredom, pain, and surprise, are induced through the presentation of emotional stimuli and electrocardiography (ECG), electrodermal activity (EDA), skin temperature (SKT), and photoplethysmography (PPG) as physiological signals are measured to collect a dataset from 217 participants when experiencing the emotions.

Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure.

We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes.

Antiphotoaging effect of chitooligosaccharides on human dermal fibroblasts.

Background/purpose: In the present study, the effect of 3-5 kDa chitooligosaccharide (COS) on homeostasis between the expression of collagen-degrading matrix metalloproteinases (MMPs) and collagen synthesis was investigated using ultraviolet (UV)-A irradiated dermal fibroblasts.

Methods: UV protection imparted by 3-5 kDa COS was measured by examining the UV absorption spectrum. Collagenase MMP secretion was examined using an enzyme-linked immunosorbent assay.

Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics.

Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.

Transparent nano-floating gate memory on glass.

We construct fully transparent nano-floating gate memory devices on a glass substrate. These memory thin-film transistors consist of channel layers of ZnO films, electrodes of Al/ITO, and floating gate nodes of Al nanoparticles, exhibiting a transmittance of approximately 71% in the visible region. Their electron mobility, on/off ratio, and threshold voltage shift are estimated to be 0.

ZnO nanowire-based nonvolatile memory devices with Al2O3 layers as storage nodes.

Top-gate ZnO nanowire field-effect transistors (FETs) with Al2O3 gate dielectric layers as storage nodes were fabricated and their memory effects were characterized in this work. The Al2O3 layers deposited on the ZnO nanowire channels were utilized not only as gate dielectric ones but also as charge trapping ones. For a representative top-gate ZnO nanowire FET, its I(DS)-V(GS) characteristics for the double sweep of the gate voltages exhibit the counterclockwise hysteresis and the threshold voltage shift.

Flexible TFTs based on solution-processed ZnO nanoparticles.

Flexible electronic devices which are lightweight, thin and bendable have attracted increasing attention in recent years. In particular, solution processes have been spotlighted in the field of flexible electronics, since they provide the opportunity to fabricate flexible electronics using low-temperature processes at low-cost with high throughput. However, there are few reports which describe the characteristics of electronic devices on flexible substrates.

ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles.

The memory characteristics of top-gate single ZnO nanowire-based field-effect transistors (FETs) with floating gate nodes consisting of Au nanoparticles on top of the nanowire channels were investigated in this study. Au nanoparticles, synthesized by a thermal deposition of Au thin film and by a subsequent thermal annealing procedure, were embedded in between Al2O3 tunneling and control gate layers deposited on ZnO nanowire channels. For a representative single ZnO nanowire-based FET with floating gate nodes consisting of Au nanoparticles embedded between Al2O3 layers, its drain current versus gate voltage (I(DS)-V(DS)) characteristics for a double sweep in the gate voltage range from -4 to 4 V exhibit a clockwise hysteresis loop with a threshold voltage shift of deltaV(th) = 1.

Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxides.

The electrical characteristics of titanium (Ti) nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors and metal-oxide-semiconductor field effect transistors (MOSFETs) with blocking Al2O3 layers are studied in this work. Ti nanoparticles were synthesized by a thermal deposition of Ti and by a subsequent thermal annealing procedure. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with Ti nanoparticles exhibit large flat-band voltage shifts, demonstrating the presence of charge storages in the Ti nanoparticles.