Flexion bonding transfer of multilayered graphene as a top electrode in transparent organic light-emitting diodes.

Graphene has attracted considerable attention as a next-generation transparent conducting electrode, because of its high electrical conductivity and optical transparency. Various optoelectronic devices comprising graphene as a bottom electrode, such as organic light-emitting diodes (OLEDs), organic photovoltaics, quantum-dot LEDs, and light-emitting electrochemical cells, have recently been reported. However, performance of optoelectronic devices using graphene as top electrodes is limited, because the lamination process through which graphene is positioned as the top layer of these conventional OLEDs is a lack of control in the surface roughness, the gapless contact, and the flexion bonding between graphene and organic layer of the device.

Antimony selenide phase-change nanowires for memory application.

Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalyst-free approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (approximately 10 Momega) and low-resistance (approximately 1 komega) states which are attributed to amorphous and crystalline states, respectively.

Electro-thermal analysis of nano scale PRAM with U shaped bottom electrode.

In this paper, we have investigated the phase change memory device with U-shaped bottom electrode using three-dimensional finite element analysis tool. From the simulation, the reset current of PRAM with U-shaped bottom electrode is greatly reduced, compared with the conventional device. And the experimental result clearly shows that the PRAM with U-shaped bottom electrode has 35% smaller RESET current, compared with the conventional PRAM device.

Investigation of the effect of calcination temperature on HMDS-treated ordered mesoporous silica film.

To reduce signal delay in ultra-large-scale integrated circuits, an intermetal dielectric with low dielectric constant is required. Ordered mesoporous silica film is appropriate for use as an intermetal dielectric due to its low dielectric constant and superior mechanical properties. To reduce the dielectric constant, an ordered mesoporous silica film prepared by a tetraethoxysilane/methyltriethoxysilane silica precursor and Brij-76 block copolymer was surface-modified by hexamethyldisilazane (HMDS) treatment.