Penile Erection Morphometry: The Need for a Novel Approach.

For many males, sexual function holds significant value in determining their quality of life. Despite the importance of male erectile function, no quantitative method to measure it accurately is currently available. Standardized assessment methods such as RigiScan™, International Index of Erectile Function (IIEF-5), and the stamp test are used to evaluate sexual function, but those methods cannot repetitively and quantitatively measure erectile function.

Advances in Male Contraception: When Will the Novel Male Contraception be Available?

Many contraceptive methods have been developed over the years due to high demand. However, female contraceptive pills and devices do not work for all females due to health conditions and side effects. Also, the number of males who want to actively participate in family planning is gradually increasing.

Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers.

A DUV-LED with a graded superlattice electron blocking layer (GSL-EBL) is demonstrated to show improved carrier injection into the multi-quantum well region. The structures of modified EBLs are designed simulation. The simulation results show the carrier behavior mechanism of DUV-LEDs with a single EBL (S-EBL), graded EBL (G-EBL), and GSL-EBL.

Deep-Ultraviolet AlGaN/AlN Core-Shell Multiple Quantum Wells on AlN Nanorods via Lithography-Free Method.

We report deep ultraviolet (UVC) emitting core-shell-type AlGaN/AlN multiple quantum wells (MQWs) on the AlN nanorods which are prepared by catalyst/lithography free process. The MQWs are grown on AlN nanorods on a sapphire substrate by polarity-selective epitaxy and etching (PSEE) using high-temperature metal organic chemical vapor deposition. The AlN nanorods prepared through PSEE have a low dislocation density because edge dislocations are bent toward neighboring N-polar AlN domains.

GaN Epitaxial Layer Grown with Conductive Al(x)Ga(1-x)N Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition.

This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0% to 100%. In terms of the crystal quality of the GaN layer, 79% Al was the optimal composition of the Al(x)Ga(1-x)N buffer layer in our experiment.