Chemical carving lithography with scanning catalytic probes.

This study introduces a new chemical carving technique as an alternative to existing lithography and etching techniques. Chemical carving incorporates the concept of scanning probe lithography and metal-assisted chemical etching (MaCE). A catalyst-coated probe mechanically scans a Si substrate in a solution, and the Si is chemically etched into the shape of the probes, forming pre-defined 3D patterns.

Electrochemical local etching of silicon in etchant vapor.

Direct machining and imprinting of Si are beneficial for simplifying the fabrication of microelectromechanical systems, nanoelectromechanical systems, optical devices, and fin field-effect transistors, and for reducing process costs. Electrochemical micromachining has been introduced for highly doped Si, but complex structures cannot be imprinted directly. With chemical imprinting, complex nano/micropatterns can be imprinted even on low-doped Si, but the physical contact can damage the templates.

Anodic Imprint Lithography: Direct Imprinting of Single Crystalline GaAs with Anodic Stamp.

Anodic imprint lithography patterns the GaAs substrate electrochemically by applying a voltage through a predefined anodic stamp. This newly devised technique performs anodic etching in a stamping manner. Stamps that serve as anodic electrodes are fabricated precisely, and the patterns can be imprinted continuously on GaAs substrates.

Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing.

The influence of thermal annealing on the properties of germanium grown on silicon (Ge-on-Si) has been investigated. Depth dependencies of strain and photoluminescence (PL) were compared for as-grown and annealed Ge-on-Si samples to investigate how intermixing affects the optical properties of Ge-on-Si. The tensile strain on thermally annealed Ge-on-Si increases at the deeper region, while the PL wavelength becomes shorter.

Resist-Free Direct Stamp Imprinting of GaAs via Metal-Assisted Chemical Etching.

We introduce a method for the direct imprinting of GaAs substrates using wet-chemical stamping. The predefined patterns on the stamps etch the GaAs substrates via metal-assisted chemical etching. This is a resist-free method in which the stamp and the GaAs substrate are directly pressed together.

Chemical Imprinting of Crystalline Silicon with Catalytic Metal Stamp in Etch Bath.

Conventional lithography using photons and electrons continues to evolve to scale down three-dimensional nanoscale patterns, but the complexity of technology and equipment is increasing due to diffraction and scattering problems. Physical contact lithography methods, such as nanoimprint and soft lithography, have been developed as an alternative technique. These techniques imprint predefined structures on a stamp to the polymer resist and use the polymer resist as a mask to dry etch the nanostructure on the substrate.

Nonlinear Etch Rate of Au-Assisted Chemical Etching of Silicon.

We demonstrated time-dependent mass transport mechanisms of Au-assisted chemical etching of Si substrates. Variations in the etch rate and surface topology were correlated with catalyst features and etching duration. Nonlinear etching characteristics were associated with the formation of pinholes and whiskers.

Lateral photovoltaic effect in flexible free-standing reduced graphene oxide film for self-powered position-sensitive detection.

Lightweight, simple and flexible self-powered photodetectors are urgently required for the development and application of advanced optical systems for the future of wearable electronic technology. Here, using a low-temperature reduction process, we report a chemical approach for producing freestanding monolithic reduced graphene oxide papers with different gradients of the carbon/oxygen concentration ratio. We also demonstrate a novel type of freestanding monolithic reduced graphene oxide self-powered photodetector based on a symmetrical metal-semiconductor-metal structure.

Thermally Induced Tensile Strain of Epitaxial Ge Layers Grown by a Two-Step e-Beam Evaporation Process on Si Substrates.

We have investigated the thermally induced tensile strain in Ge-on-Si for use in optical sources of interconnection systems. Epitaxial Ge layers were grown using a two-step hetero-epitaxy at low and high temperatures. The as-grown Ge-on-Si was then annealed for direct bandgap conversion.