On the principle of reciprocity in inelastic electron scattering.

In electron microscopy the principle of reciprocity is often used to imply time reversal symmetry. While this is true for elastic scattering, its applicability to inelastic scattering is less well established. From the second law of thermodynamics, the entropy for a thermally isolated system must be constant for any reversible process.

Modelling dynamical 3D electron diffraction intensities. II. The role of inelastic scattering.

The strong interaction of high-energy electrons with a crystal results in both dynamical elastic scattering and inelastic events, particularly phonon and plasmon excitation, which have relatively large cross sections. For accurate crystal structure refinement it is therefore important to uncover the impact of inelastic scattering on the Bragg beam intensities. Here a combined Bloch wave-Monte Carlo method is used to simulate phonon and plasmon scattering in crystals.

Modelling dynamical 3D electron diffraction intensities. I. A scattering cluster algorithm.

Three-dimensional electron diffraction (3D-ED) is a powerful technique for crystallographic characterization of nanometre-sized crystals that are too small for X-ray diffraction. For accurate crystal structure refinement, however, it is important that the Bragg diffracted intensities are treated dynamically. Bloch wave simulations are often used in 3D-ED, but can be computationally expensive for large unit cell crystals due to the large number of diffracted beams.

Towards Electron Energy Loss Compton Spectra Free From Dynamical Diffraction Artifacts.

The Compton signal in electron energy loss spectroscopy (EELS) is used to determine the projected electron momentum density of states for the solid. A frequent limitation however is the strong dynamical scattering of the incident electron beam within a crystalline specimen, i.e.

Inelastic Scattering in Electron Backscatter Diffraction and Electron Channeling Contrast Imaging.

Electron backscatter diffraction (EBSD) and electron channeling contrast imaging (ECCI) are used to extract crystallographic information from bulk samples, such as their crystal structure and orientation as well as the presence of any dislocation and grain boundary defects. These techniques rely on the backscattered electron signal, which has a large distribution in electron energy. Here, the influence of plasmon excitations on EBSD patterns and ECCI dislocation images is uncovered by multislice simulations including inelastic scattering.

Microscopic Analysis of Interdiffusion and Void Formation in CdTeSe and CdTe Layers.

The use of CdSe layers has recently emerged as a route to improving CdTe photovoltaics through the formation of a CdTeSe (CST) phase. However, the extent of the Se diffusion and the influence it has on the CdTe grain structure has not been widely investigated. In this study, we used transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and electron backscatter diffraction (EBSD) to investigate the impact of growing CdTe layers on three different window layer structures CdS, CdSe, and CdS/CdSe.

Evidence for Self-healing Benign Grain Boundaries and a Highly Defective SbSe-CdS Interfacial Layer in SbSe Thin-Film Photovoltaics.

The crystal structure of SbSe gives rise to unique properties that cannot otherwise be achieved with conventional thin-film photovoltaic materials, such as CdTe or Cu(In,Ga)Se. It has previously been proposed that grain boundaries can be made benign provided only the weak van der Waals forces between the (SbSe) ribbons are disrupted. Here, it is shown that non-radiative recombination is suppressed even for grain boundaries cutting across the (SbSe) ribbons.

Direct growth of Si nanowires on flexible organic substrates.

A key characteristic of semiconductor nanowires (NWs) is that they grow on any substrate that can withstand the growth conditions, paving the way for their use in flexible electronics. We report on the direct growth of crystalline silicon nanowires on polyimide substrates. The Si NWs are grown by plasma-enhanced chemical vapor deposition, which allows the growth to proceed at temperatures low enough to be compatible with plastic substrates (350 °C), where gold or indium are used as growth seeds.

Silver nanoparticle toxicity in sea urchin Paracentrotus lividus.

Silver nanoparticles (AgNPS) are an important model system for studying potential environmental risks posed by the use of nanomaterials. So far there is no consensus as to whether toxicity is due to AgNPs themselves or Ag(+) ions leaching from their surfaces. In sea urchin Paracentrotus lividus, AgNPs cause dose dependent developmental defects such as delayed development, bodily asymmetry and shortened or irregular arms, as well as behavioural changes, particularly in swimming patterns, at concentration ∼0.

Optical characteristics of silicon nanowires grown from tin catalyst layers on silicon coated glass.

The optical characteristics of silicon nanowires grown on Si layers on glass have been modeled using the FDTD (Finite Difference Time Domain) technique and compared with experimental results. The wires were grown by the VLS (vapour-liquid-solid) method using Sn catalyst layers and exhibit a conical shape. The resulting measured and modeled absorption, reflectance and transmittance spectra have been investigated as a function of the thickness of the underlying Si layer and the initial catalyst layer, the latter having a strong influence on wire density.

Suzuki segregation in a binary Cu-Si alloy.

Suzuki segregation to stacking faults and coherent twin boundaries has been investigated in a Cu-7.15 at.% Si alloy, heat-treated at temperatures of 275, 400 and 550 degrees C, using field-emission gun transmission electron microscopy.