Whole visible range emitting CuInS/ZnS QDs were obtained with broad band-width and high luminous efficiency by altering the Cu/In ratio and coating ZnS layer. 1-Dodecanethiol (DDT) as a sulfur source in the ZnS coating process can inhibit the lattice defects caused by Zn inter-diffusion, thus increasing the photoluminescence quantum yield (PL QY). Then the stability and lighting performance of white light-emitting diodes (WLEDs) based on these CuInS/ZnS QDs were characterized.
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