Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3).

The atomic scale oxidation of the alpha-SiC(0001)-(3 x 3) surface is investigated by atom-resolved scanning tunneling microscopy, core level synchrotron radiation based photoemission spectroscopy, and infrared absorption spectroscopy. The results reveal that the initial oxidation takes place through the relaxation of lower layers, away from the surface dangling bond, in sharp contrast to silicon oxidation.

Low-loss and low-drive-voltage electro-optical phase modulator at 10.6 microm.

We present the experimental performance of a 16-mm-long phase modulator in the 10.6-microm wavelength range using the electro-optical effect in a InP/Ga(0.47) In(0.

Amplitude and phase modulation by free-carrier injection in III-V semiconducting waveguides for the 10.6-microm wavelength.

We give experimental results for amplitude and phase modulation by free-carrier injection in planar and rib waveguides at a wavelength of 10.6 microm. These waveguides have been formed by metal-organic chemical-vapor deposition of InP and GalnAs layers on InP substrates.