Analytical study of KOH wet etch surface passivation for III-nitride micropillars.

III-Nitride micropillar structures show great promise for applications in micro light-emitting diodes and vertical power transistors due to their excellent scalability and outstanding electrical properties. Typically, III-Nitride micropillars are fabricated through a top-down approach using reactive ion etch which leads to roughened, nonvertical sidewalls that results in significant performance degradation. Thus, it is essential to remove this plasma etch induced surface damage.