Control of light emission of quantum emitters coupled to silicon nanoantenna using cylindrical vector beams.

Light emission of europium (Eu) ions placed in the vicinity of optically resonant nanoantennas is usually controlled by tailoring the local density of photon states (LDOS). We show that the polarization and shape of the excitation beam can also be used to manipulate light emission, as azimuthally or radially polarized cylindrical vector beam offers to spatially shape the electric and magnetic fields, in addition to the effect of silicon nanorings (Si-NRs) used as nanoantennas. The photoluminescence (PL) mappings of the Eu transitions and the Si phonon mappings are strongly dependent of both the excitation beam and the Si-NR dimensions.

Improved Visible Emission from ZnO Nanoparticles Synthesized via the Co-Precipitation Method.

Since ZnO nanoparticles (NPs) possess a variety of intrinsic defects, they can provide a wide spectrum of visible emission, without adding any impurity or any doping atoms. They are attracting more and more interest as a material for light sources and energy downshifting systems. However, defect emission with a high luminescence quantum efficiency (PL QY) is difficult to obtain.

Mapping of the Electrostatic Potentials in a Fully Processed Led Device with nm-Scale Resolution by In Situ off-Axis Electron Holography.

The optoelectronic properties of a fully processed red emitting AlGaInP micro-diode device is measured using standard I-V and luminescence measurements. A thin specimen is then prepared for in situ transmission electron microscopy analysis by focused ion beam milling, then the changes of electrostatic potential as a function of applied forward bias voltage are mapped by off-axis electron holography. We demonstrate that the quantum wells in the diode sit on a potential gradient until the threshold forward bias voltage for light emission is reached; at which point the quantum wells are aligned at the same potential.

Enhancement of electric and magnetic dipole transition of rare-earth-doped thin films tailored by high-index dielectric nanostructures.

We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few-nanometer thin film of rare-earth-ion-doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of similar magnitude. By recording the photoluminescence from the deposited layer excited by a focused laser beam, we are able to simultaneously map the electric and magnetic emission enhancement on individual nanostructures.

Pressure-Induced Sublattice Disordering in SnO_{2}: Invasive Selective Percolation.

SnO_{2} powders and single crystal have been studied under high pressure using Raman spectroscopy and ab initio simulations. The pressure-induced changes are shown to drastically depend on the form of the samples. The single crystal exhibits phase transitions as reported in the literature, whereas powder samples show a disordering of the oxygen sublattice in the first steps of compression.

Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires.

The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.

Thermodynamics of nanoparticles: experimental protocol based on a comprehensive Ginzburg-Landau interpretation.

The effects of surface and interface on the thermodynamics of small particles require a deeper understanding. This step is crucial for the development of models that can be used for decision-making support to design nanomaterials with original properties. On the basis of experimental results for phase transitions in compressed ZnO nanoparticles, we show the limitations of classical thermodynamics approaches (Gibbs and Landau).

ZnO dense nanowire array on a film structure in a single crystal domain texture for optical and photoelectrochemical applications.

A single crystal domain texture quality (a unique in-plane and out-of-plane crystalline orientation over a large area) ZnO nanostructure of a dense nanowire array on a thick film has been homogeneously synthesized on a-plane sapphire substrates over large areas through a one-step chemical vapor deposition (CVD) process. The growth mechanism is clarified: a single crystal [02(-)1] oriented ZnAl(2)O(4) buffer layer was formed at the ZnO film and the a-plane sapphire substrate interface via a diffusion reaction process during the CVD process, providing improved epitaxial conditions that enable the synthesis of the high crystalline quality ZnO nanowire array on a film structure. The high optoelectronic quality of the ZnO nanowire array on a film sample is evidenced by the free exitonic emissions in the low-temperature photoluminescence spectroscopy.