Overcoming the coherence time barrier in quantum machine learning on temporal data.

The practical implementation of many quantum algorithms known today is limited by the coherence time of the executing quantum hardware and quantum sampling noise. Here we present a machine learning algorithm, NISQRC, for qubit-based quantum systems that enables inference on temporal data over durations unconstrained by decoherence. NISQRC leverages mid-circuit measurements and deterministic reset operations to reduce circuit executions, while still maintaining an appropriate length persistent temporal memory in the quantum system, confirmed through the proposed Volterra Series analysis.

Active protection of a superconducting qubit with an interferometric Josephson isolator.

Nonreciprocal microwave devices play critical roles in high-fidelity, quantum-nondemolition (QND) measurement schemes. They impose unidirectional routing of readout signals and protect the quantum systems from unwanted noise originated by the output chain. However, cryogenic circulators and isolators are disadvantageous in scalable superconducting architectures because they use magnetic materials and strong magnetic fields.

High coherence plane breaking packaging for superconducting qubits.

We demonstrate a pogo pin package for a superconducting quantum processor specifically designed with a nontrivial layout topology (e.g., a center qubit that cannot be accessed from the sides of the chip).

Effect of growth induced (non)stoichiometry on interfacial conductance in LaAlO3/SrTiO3.

We demonstrate a link between the growth process, the stoichiometry of LaAlO(3), and the interfacial electrical properties of LaAlO(3)/SrTiO(3) heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1×10(-3) Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility.