Highly active single-layer MoS catalysts synthesized by swift heavy ion irradiation.

Two-dimensional molybdenum-disulfide (MoS2) catalysts can achieve high catalytic activity for the hydrogen evolution reaction upon appropriate modification of their surface. The intrinsic inertness of the compound's basal planes can be overcome by either increasing the number of catalytically active edge sites or by enhancing the activity of the basal planes via a controlled creation of sulfur vacancies. Here, we report a novel method of activating the MoS2 surface using swift heavy ion irradiation.

High resolution AFM studies of irradiated mica-following the traces of swift heavy ions under grazing incidence.

High resolution AFM imaging of swift heavy ion irradiated muscovite mica under grazing incidence provides detailed insight into the created nanostructure features. Swift heavy ions under grazing incidence form a complex track structure along the surface, which consists of a double track of nanohillocks at the impact site accompanied by a single, several 100 nm long protrusion. Detailed track studies by varying the irradiation parameters, i.

Fabrication of nanoporous graphene/polymer composite membranes.

Graphene is currently investigated as a promising membrane material in which selective pores can be created depending on the requirements of the application. However, to handle large-area nanoporous graphene a stable support material is needed. Here, we report on composite membranes consisting of large-area single layer nanoporous graphene supported by a porous polymer.

Swift heavy ion irradiation of CaF2 - from grooves to hillocks in a single ion track.

A novel form of ion-tracks, namely nanogrooves and hillocks, are observed on CaF2 after irradiation with xenon and lead ions of about 100 MeV kinetic energy. The irradiation is performed under grazing incidence (0.3°-3°) which forces the track to a region in close vicinity to the surface.

Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation.

The controlled creation of defects in silicon carbide represents a major challenge. A well-known and efficient tool for defect creation in dielectric materials is the irradiation with swift (E(kin) ≥ 500 keV/amu) heavy ions, which deposit a significant amount of their kinetic energy into the electronic system. However, in the case of silicon carbide, a significant defect creation by individual ions could hitherto not be achieved.