We narrowed the spectral bandwidth of our 2 W broad-area laser to 8+/-1 GHz with a coarse tunability of 12 nm centered near 790 nm in an external cavity. Our passively stabilized external cavity was designed for use with high-power semiconductor lasers. The cavity length and mount are modular with a fixed pivot point so that the optical elements can be changed to access a broad frequency spectrum and enable multiple applications.
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