Publications by authors named "Brener I"

Emerging applications of metasurfaces in classical and quantum optics are driving the need for precise polarization control of nearly-degenerate, high quality (Q)-factor modes. However, current approaches to creating specifically polarized pairs of modes force a trade-off between maintaining high Q factors and robustness. Here, we solve this challenge by employing pairwise generation, annihilation, and positioning of polarization singularities, derived from symmetry-guaranteed pairs of symmetry-protected bound states in the continuum.

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Article Synopsis
  • * This study demonstrates polarization engineering of biphotons using quasi-bound states in the continuum (qBIC) resonances in GaAs metasurfaces, enhancing biphoton generation.
  • * The research shows that the qBIC mode and symmetry of meta-atoms can be adjusted to control single-photon and two-photon polarization states, paving the way for advancements in generating quantum light for future technologies.
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Terahertz (THz) near-field imaging and spectroscopy provide valuable insights into the fundamental physical processes occurring in THz resonators and metasurfaces on the subwavelength scale. However, so far, the mapping of THz surface currents has remained outside the scope of THz near-field techniques. In this study, we demonstrate that aperture-type scanning near-field microscopy enables non-contact imaging of THz surface currents in subwavelength resonators.

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Advancements in photonic quantum information systems (QIS) have driven the development of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots (QDs) as single photon sources. Strain-free, monodisperse, and spatially sparse local-droplet-etched (LDE) QDs have recently been demonstrated as a superior alternative to traditional Stranski-Krastanov QDs. However, integration of LDE QDs into nanophotonic architectures with the ability to scale to many interacting QDs is yet to be demonstrated.

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Terahertz (THz) continuous wave (CW) spectroscopy systems can offer extremely high spectral resolution over the THz band by photo-mixing high-performance telecommunications-band (1530-1565 nm) lasers. However, typical THz CW detectors in these systems use narrow band-gap photoconductors, which require elaborate material growth and generate relatively large detector noise. Here we demonstrate that two-step photon absorption in a nano-structured low-temperature grown GaAs (LT-GaAs) metasurface which enables switching of photoconductivity within approximately one picosecond.

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Metamaterial resonators have become an efficient and versatile platform in the terahertz frequency range, finding applications in integrated optical devices, such as active modulators and detectors, and in fundamental research, e.g., ultrastrong light-matter investigations.

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Bound states in the continuum (BICs) have received significant attention for their ability to enhance light-matter interactions across a wide range of systems, including lasers, sensors, and frequency mixers. However, many applications require degenerate or nearly degenerate high-quality factor (Q) modes, such as spontaneous parametric down conversion, non-linear four-wave mixing, and intra-cavity difference frequency mixing for terahertz generation. Previously, degenerate pairs of bound states in the continuum (BICs) have been created by fine-tuning the structure to engineer the degeneracy, yielding BICs that respond unpredictably to structure imperfections and material variations.

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The effect of terahertz (THz) pulse generation has revolutionized broadband coherent spectroscopy and imaging at THz frequencies. However, THz pulses typically lack spatial structure, whereas structured beams are becoming essential for advanced spectroscopy applications. Nonlinear optical metasurfaces with nanoscale THz emitters can provide a solution by defining the beam structure at the generation stage.

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All-dielectric metasurfaces have recently led to a paradigm shift in nonlinear optics as they allow for circumventing the phase matching constraints of bulk crystals and offer high nonlinear conversion efficiencies when normalized by the light-matter interaction volume. Unlike bulk crystals, in all-dielectric metasurfaces nonlinear conversion efficiencies primarily rely on the material nonlinearity, field enhancements, and the modal overlaps, therefore most efforts to date have only focused on utilizing these degrees of freedom. In this work, we demonstrate that for second-harmonic generation in all-dielectric metasurfaces, an additional degree of freedom is the control of the polarity of the nonlinear susceptibility.

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Quantum state engineering, the cornerstone of quantum photonic technologies, mainly relies on spontaneous parametric downconversion and four-wave mixing, where one or two pump photons spontaneously decay into a photon pair. Both of these nonlinear effects require momentum conservation for the participating photons, which strongly limits the versatility of the resulting quantum states. Nonlinear metasurfaces have subwavelength thickness and allow the relaxation of this constraint; when combined with resonances, they greatly expand the possibilities of quantum state engineering.

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Metasurfaces control optical wavefronts via arrays of nanoscale resonators laid out across a surface. When combined with III-V semiconductors with strong optical nonlinearities, a variety of nonlinear effects such as harmonic generation and all-optical modulation can be enabled and enhanced at the nanoscale. This review presents our research on engineering and boosting nonlinear effects in ultrafast and nonlinear semiconductor metasurfaces fabricated at the Center for Integrated Nanotechnologies.

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Ultrafast optical excitation of select materials gives rise to the generation of broadband terahertz (THz) pulses. This effect has enabled the field of THz time-domain spectroscopy and led to the discovery of many physical mechanisms behind THz generation. However, only a few materials possess the required properties to generate THz radiation efficiently.

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Some selective serotonin reuptake inhibitors (SSRIs), primarily sertraline, demonstrate anti-proliferative activity in malignant cell-lines and in xenografted mouse models of colorectal tumor. There is, however, a paucity of comparative studies on the anti-tumor effects of SSRIs. We compared the in vitro and in vivo effects of sertraline and citalopram on murine 4T1 breast cancer.

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Enhancing the efficiency of second-harmonic generation using all-dielectric metasurfaces to date has mostly focused on electromagnetic engineering of optical modes in the meta-atom. Further advances in nonlinear conversion efficiencies can be gained by engineering the material nonlinearities at the nanoscale, however this cannot be achieved using conventional materials. Semiconductor heterostructures that support resonant nonlinearities using quantum engineered intersubband transitions can provide this new degree of freedom.

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Recent advances in emerging atomically thin transition metal dichalcogenide semiconductors with strong light-matter interactions and tunable optical properties provide novel approaches for realizing new material functionalities. Coupling two-dimensional semiconductors with all-dielectric resonant nanostructures represents an especially attractive opportunity for manipulating optical properties in both the near-field and far-field regimes. Here, by integrating single-layer WSe and titanium oxide (TiO) dielectric metasurfaces with toroidal resonances, we realized robust exciton emission enhancement over 1 order of magnitude at both room and low temperatures.

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Despite their wide use in terahertz (THz) research and technology, the application spectra of photoconductive antenna (PCA) THz detectors are severely limited due to the relatively high optical gating power requirement. This originates from poor conversion efficiency of optical gate beam photons to photocurrent in materials with sub-picosecond carrier lifetimes. Here we show that using an ultra-thin (160 nm), perfectly absorbing low-temperature grown GaAs metasurface as the photoconductive channel drastically improves the efficiency of THz PCA detectors.

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Optical metasurfaces were suggested as a route for engineering advanced light sources with tailored emission properties. In particular, they provide a control over the emission directionality, which is essential for single-photon sources and LED applications. Here, we experimentally study light emission from a metasurface composed of III-V semiconductor Mie-resonant nanocylinders with integrated quantum dots (QDs).

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Nonlinear optical devices and their implementation into modern nanophotonic architectures are constrained by their usually moderate nonlinear response. Recently, epsilon-near-zero (ENZ) materials have been found to have a strong optical nonlinearity, which can be enhanced through the use of cavities or nano-structuring. Here, we study the pump dependent properties of the plasmon resonance in the ENZ region in a thin layer of indium tin oxide (ITO).

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Mie-resonant dielectric metasurfaces are excellent candidates for both fundamental studies related to light-matter interactions and for numerous applications ranging from holography to sensing to nonlinear optics. To date, however, most applications using Mie metasurfaces utilize only weak light-matter interaction. Here, we go beyond the weak coupling regime and demonstrate for the first time strong polaritonic coupling between Mie photonic modes and intersubband (ISB) transitions in semiconductor heterostructures.

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Perfect optical absorption occurs in a metasurface that supports two degenerate and critically-coupled modes of opposite symmetry. The challenge in designing a perfectly absorbing metasurface for a desired wavelength and material stems from the fact that satisfying these conditions requires multi-dimensional optimization often with parameters affecting optical resonances in non-trivial ways. This problem comes to the fore in semiconductor metasurfaces operating near the bandgap wavelength, where intrinsic material absorption varies significantly.

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The color of light is a fundamental property of electromagnetic radiation; as such, control of the frequency is a cornerstone of modern optics. Nonlinear materials are typically used to generate new frequencies, however the use of time-variant systems provides an alternative approach. Utilizing a metasurface that supports a high-quality factor resonance, we demonstrate that a rapidly shifting refractive index will induce frequency conversion of light that is confined in the nanoresonator meta-atoms.

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Strong coupling of an intersubband (ISB) electron transition in quantum wells to a subwavelength plasmonic nanoantenna can give rise to intriguing quantum phenomena, such as ISB polariton condensation, and enable practical devices including low threshold lasers. However, experimental observation of ISB polaritons in an isolated subwavelength system has not yet been reported. Here, we use scanning probe near-field microscopy and Fourier-transform infrared (FTIR) spectroscopy to detect formation of ISB polariton states in a single nanoantenna.

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Terahertz (THz) photoconductive devices are used for generation, detection, and modulation of THz waves, and they rely on the ability to switch electrical conductivity on a subpicosecond time scale using optical pulses. However, fast and efficient conductivity switching with high contrast has been a challenge, because the majority of photoexcited charge carriers in the switch do not contribute to the photocurrent due to fast recombination. Here, we improve efficiency of electrical conductivity switching using a network of electrically connected nanoscale GaAs resonators, which form a perfectly absorbing photoconductive metasurface.

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