Publications by authors named "Brenda L VanMil"
Article Synopsis
- There is a strong connection between how mobile carriers are in epitaxial graphene and its Raman topography when grown on silicon carbide.
- The Hall mobility varies significantly based on the thickness of the graphene and the uniformity of strain in the monolayer.
- High mobility of 18,100 cm²/(V s) at room temperature is achieved, and this mobility is greatly affected by the stacking arrangement of the graphene layers.
We present X-ray photoelectron spectroscopy, van der Pauw Hall mobilities, low-temperature far-infrared magneto transmission (FIR-MT), and atomic force microscopy (AFM) results from graphene films produced by radiative heating in an ultrahigh vacuum (UHV) chamber or produced by radio frequency (RF) furnace annealing in a high vacuum chemical vapor deposition system on Si- and C-face 4H SiC substrates at 1200-1600 degrees C. Although the vacuum level and heating methods are different, graphene films produced by the two methods are chemically similar with the RF furnace annealing typically producing thicker graphene films than UHV. We observe, however, that the formation of graphene on the two faces is different with the thicker graphene films on the C-face RF samples having higher mobility.
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