Publications by authors named "Boyue Bian"
Article Synopsis
- Semiconducting epigraphene (SEG) exhibits a band gap of 0.6 eV and high mobility, outperforming silicon and existing 2D semiconductors.
- Attempts to create viable semiconducting graphene in the past have largely failed, but SEG represents a breakthrough by using a quasi-equilibrium annealing method on silicon carbide substrates.
- The properties of SEG, such as its robustness and compatibility with standard fabrication techniques, make it a promising material for advanced nanoelectronics applications.
