High-peak-power, high-energy, high-average-power pulsed fiber laser system with versatile pulse duration and shape.

We present a pulsed fiber laser system with average power up to 265 W, pulse energy up to 10.6 mJ, pulse duration adjustable in the range 500 ps-500 ns, repetition rate fully controllable from single-shot operation up to 1 MHz, and the ability to control peak power independently of pulse energy. The system has a compact, all-spliced construction.

Performance comparison of Zr-based and Bi-based erbium-doped fiber amplifiers.

In this Letter, we present a comprehensive comparison of the performance of a zirconia-based erbium-doped fiber amplifier (Zr-EDFA) and a bismuth-based erbium-doped fiber amplifier (Bi-EDFA). The experimental results reveal that a Zr-EDFA can achieve comparable performance to the conventional Bi-EDFA for C-band and L-band operations. With a combination of both Zr and Al, we could achieve a high erbium-doping concentration of about 2800 ppm (parts per million) in the glass host without any phase separations of rare earths.

Multi-watts narrow-linewidth all fiber Yb-doped laser operating at 1179 nm.

An all-fiber, narrow-linewidth, high power Yb-doped silica fiber laser at 1179 nm has been demonstrated. More than 12 W output power has been obtained, corresponding to a slope efficiency of 43% with respect to launched pump power, by core-pumping at 1090 nm. In order to increase the pump absorption, the Yb-doped fiber was heated up to 125 degrees C.

High-power Tm-doped fiber distributed-feedback laser at 1943 nm.

We report on high-power operation of a fiber distributed-feedback (DFB) laser fabricated from Tm-doped photosensitive alumino-silicate fiber and in-band pumped by an Er/Yb fiber laser at 1565 nm. The fiber DFB laser yielded up to 875 mW of single-ended output at 1943 nm on two orthogonally polarized modes for 3.5 W of absorbed pump power.

Broadly tunable single-frequency cw mid-infrared source with milliwatt-level output based on difference-frequency generation in orientation-patterned GaAs.

A narrow-linewidth mid-IR source based on difference-frequency generation of an amplified 1.5 microm diode laser and a cw Tm-doped fiber laser in orientation-patterned (OP) GaAs has been developed and evaluated for spectroscopic applications. The source can be tuned to any frequency in the 7.

Photodarkening in Yb-doped aluminosilicate fibers induced by 488 nm irradiation.

Photodarkening of Yb-doped aluminosilicate fibers by continuous wave 488 nm irradiation was investigated. The irradiation induced significant excess loss in the UV-visible spectroscopy (VIS) region in Yb-doped aluminosilicate fibers while pure aluminosilicate fibers showed negligible induced loss. Ultraviolet-VIS-near-infrared spectroscopy revealed an absorption peak at 220 nm in unexposed Yb-doped aluminosilicate fiber preforms.

Domain-engineered lithium niobate as a medium for an integrated solid-state two-dimensional color laser scanning system.

A recently proposed alternative to conventional prism-type electro-optic solid-state deflectors is the single interface deflector. Whereas these deflectors are comparable in performance to prism-type deflectors, they are far simpler in construction. This simplicity obviously has the advantages that it reduces fabrication time and cost and allows for easier optimization.

Resolution considerations in electro-optic, single interface deflectors.

We discuss the maximum theoretical resolution of a single interface, electro-optically controllable beam deflector in domain-engineered LiNbO3 and report on experimental results for implementation of devices optimized either for maximum resolution or for maximum deflection angle. For the resolution optimized device we observed approximately 50 resolvable spots for a +/- 1250-V range, which to our knowledge is a report of one of the highest ratios of resolution per volt from a solid-state electro-optic beam deflector.