Publications by authors named "Bostel A"

The preferential retention of high evaporation field chemical species at the sample surface in atom-probe tomography (e.g., boron in silicon or in metallic alloys) leads to correlated field evaporation and pronounced pile-up effects on the detector.

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Data collected in atom probe tomography have to be carefully analysed in order to give reliable composition data accurately and precisely positioned in the probed volume. Indeed, the large analysed surfaces of recent instruments require reconstruction methods taking into account not only the tip geometry but also accurate knowledge of geometrical projection parameters. This is particularly crucial in the analysis of multilayers materials or planar interfaces.

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Atom probe is a very powerful instrument to measure concentrations on a sub nanometric scale [M.K. Miller, G.

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A commercially available PCR kit (AnDiaTec Salmonella sp. PCR-ELISA) was developed and evaluated for the detection of Salmonella sp. in food samples.

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As compared to other techniques, the mass resolution of the 3D atom probe is rather poor. This low mass resolution derives from the spread in energy of field-evaporated ions. In this work, the single counter-electrode used to remove atoms from the specimen was replaced with a dual counter-electrode.

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We have used a first-order reflectron lens in an optical tomographic atom probe in order to improve the mass resolution. Calculations have been performed to determine the effect of second-order errors in ion energy and incidence angle on the performance of the lens. By applying a correction procedure based on the results of these calculations, we have been able to improve experimental mass resolution by 30%.

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The field distribution and the ion trajectories close to the tip surface are known to mainly control the contrast of field-ion microscopy and the resolution of the three-dimensional atom probe. The proper interpretation of images provided by these techniques requires the electric field and the ion trajectories to be determined accurately. A model has been developed in order to compute the ion trajectories close to a curved emitting surface modelled at the atomic scale.

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The resolution of three-dimensional atom probe (3DAP) is known to be mainly controlled by the aberrations of the ion trajectories near the surface of the specimen. A model has been developed to compute the ion trajectories in 3D near a sharp hemispherical electrode defined at the atomic scale. Simulations were applied on one-phase binary alloys.

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The lateral resolution of three-dimensional atom probes is mainly controlled by the aberrations of the ion trajectories near the specimen surface. For the first time, a simulation program has been developed to reconstruct the ion trajectories near a sharp hemispherical electrode defined at the atomic scale. Surface atoms submitted to the highest field were removed one by one.

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