Tailoring Subthreshold Swing in A-IGZO Thin-Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences.

Amorphous IGZO (a-IGZO) thin-film transistors (TFTs) are standard backplane electronics to power active-matrix organic light-emitting diode (AMOLED) televisions due to their high carrier mobility and negligible low leakage characteristics. Despite their advantages, limitations in color depth arise from a steep subthreshold swing (SS) (≤ 0.1 V/decade), necessitating costly external compensation for IGZO transistors.

Machine learning-based exploration of molecular design descriptors for area-selective atomic layer deposition (AS-ALD) precursors.

Context: Area-selective atomic layer deposition (AS-ALD) is a thin film deposition technique developed using conventional ALD by considering the surface chemical nature of the substrate. Selecting appropriate precursors is a critical step in developing an efficient AS-ALD process with high deposition selectivity. However, the current efficiency of research on viable AS-ALD precursors is limited because of the absence of theoretical design rules for precursor chemical structures.

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of InO and Application to High-Performance Field-Effect Transistors.

Indium oxide (InO) is a transparent wide-bandgap semiconductor suitable for use in the back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional (M3D) devices. The structural, chemical, and electrical properties of InO films deposited by plasma-enhanced atomic layer deposition (PEALD) were examined using two different liquid-based precursors: (3-(dimethylamino)propyl)-dimethyl indium (DADI) and (,-dimethylbutylamine)trimethylindium (DATI). DATI-derived InO films had higher growth per cycle (GPC), superior crystallinity, and low defect density compared with DADI-derived InO films.

Low-temperature growth of MoS on polymer and thin glass substrates for flexible electronics.

Recent advances in two-dimensional semiconductors, particularly molybdenum disulfide (MoS), have enabled the fabrication of flexible electronic devices with outstanding mechanical flexibility. Previous approaches typically involved the synthesis of MoS on a rigid substrate at a high temperature followed by the transfer to a flexible substrate onto which the device is fabricated. A recurring drawback with this methodology is the fact that flexible substrates have a lower melting temperature than the MoS growth process, and that the transfer process degrades the electronic properties of MoS.

Atomic Layer Deposition Route to Scalable, Electronic-Grade van der Waals Te Thin Films.

Scalable production and integration techniques for van der Waals (vdW) layered materials are vital for their implementation in next-generation nanoelectronics. Among available approaches, perhaps the most well-received is atomic layer deposition (ALD) due to its self-limiting layer-by-layer growth mode. However, ALD-grown vdW materials generally require high processing temperatures and/or additional postdeposition annealing steps for crystallization.

Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control.

The integration of bottom-up fabrication techniques and top-down methods can overcome current limits in nanofabrication. For such integration, we propose a gradient area-selective deposition using atomic layer deposition to overcome the inherent limitation of 3D nanofabrication and demonstrate the applicability of the proposed method toward large-scale production of materials. Cp(CH)Ti(OMe) is used as a molecular surface inhibitor to prevent the growth of TiO film in the next atomic layer deposition process.

Commensurate Assembly of C on Black Phosphorus for Mixed-Dimensional van der Waals Transistors.

2D crystals can serve as templates for the realization of new van der Waals (vdW) heterostructures via controlled assembly of low-dimensional functional components. Among available 2D crystals, black phosphorus (BP) is unique due to its puckered atomic surface topography, which may lead to strong epitaxial phenomena through guided vdW assembly. Here, it is demonstrated that a BP template can induce highly oriented assembly of C molecular crystals.

Growth modulation of atomic layer deposition of HfO by combinations of HO and O reactants.

Atomic layer deposition (ALD) is a thin film deposition technique based on self-saturated reactions between a precursor and reactant vacuum conditions. A typical ALD reaction consists of the first half-reaction of the precursor and the second half-reaction of the counter reactant, in which the terminal groups on the surface change after each half-reaction. In this study, the effects of counter reactants on the surface termination and growth characteristics of ALD HfO thin films formed on Si substrates using tetrakis(dimethylamino)-hafnium (TDMAH) as a precursor were investigated.

Effects of Al Precursors on the Characteristics of Indium-Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition.

Atomic layer deposition (ALD) has attracted much attention, particularly for applications in nanoelectronics because of its atomic-level controllability and high-quality products. In this study, we developed a plasma-enhanced atomic layer deposition (PEALD) process to fabricate a homogeneous indium aluminum oxide (IAO) semiconductor film. Trimethylaluminum (TMA) and dimethylaluminum isopropoxide (DMAI) were used as Al precursors, which yielded different compositions.

Thermal Annealing of Molecular Layer-Deposited Indicone Toward Area-Selective Atomic Layer Deposition.

Area-selective atomic layer deposition (AS-ALD) is a promising technique for fine nanoscale patterning, which may overcome the drawbacks of conventional top-down approaches for the fabrication of future electronic devices. However, conventional materials and processes often employed for AS-ALD are inadequate for conformal and rapid processing. We introduce a new strategy for AS-ALD based on molecular layer deposition (MLD) that is compatible with large-scale manufacturing.

Molecular Adsorption of NH and NO on Zr and Hf Dichalcogenides (S, Se, Te) Monolayers: A Density Functional Theory Study.

Due to their atomic thicknesses and semiconducting properties, two-dimensional transition metal dichalcogenides (TMDCs) are gaining increasing research interest. Among them, Hf- and Zr-based TMDCs demonstrate the unique advantage that their oxides (HfO and ZrO) are excellent dielectric materials. One possible method to precisely tune the material properties of two-dimensional atomically thin nanomaterials is to adsorb molecules on their surfaces as non-bonded dopants.

Synthesis of a Hybrid Nanostructure of ZnO-Decorated MoS by Atomic Layer Deposition.

We introduce the synthesis of hybrid nanostructures comprised of ZnO nanocrystals (NCs) decorating nanosheets and nanowires (NWs) of MoS prepared by atomic layer deposition (ALD). The concentration, size, and surface-to-volume ratio of the ZnO NCs can be systematically engineered by controlling both the number of ZnO ALD cycles and the properties of the MoS substrates, which are prepared by sulfurizing ALD MoO. Analysis of the chemical composition combined with electron microscopy and synchrotron X-ray techniques as a function of the number of ZnO ALD cycles, together with the results of quantum chemical calculations, help elucidate the ZnO growth mechanism and its dependence on the properties of the MoS substrate.

Surface Energy Change of Atomic-Scale Metal Oxide Thin Films by Phase Transformation.

Fine-tuning of the surface free energy (SFE) of a solid material facilitates its use in a wide range of applications requiring precise control of the ubiquitous presence of liquid on the surface. In this study, we found that the SFE of rare-earth oxide (REO) thin films deposited by atomic layer deposition (ALD) gradually decreased with increasing film thickness; however, these changes could not be understood by classical interaction models. Herein, the mechanism underlying the aforesaid decrease was systematically studied by measuring contact angles, surface potential, adhesion force, crystalline structures, chemical compositions, and morphologies of the REO films.

Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices.

We present an atomic layer deposition (ALD) process for the synthesis of tin nitride (SnN) thin films using tetrakis(dimethylamino) tin (TDMASn, Sn(NMe)) and ammonia (NH) as the precursors at low deposition temperatures (70-200 °C). This newly developed ALD scheme exhibits ideal ALD features such as self-limited film growth at 150 °C. The growth per cycle (GPC) was found to be ∼0.

Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications.

Indium gallium oxide (IGO) thin films were deposited via atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (InCA-1) and trimethylgallium (TMGa) as indium and gallium precursors, respectively, and hydrogen peroxide as the reactant. To clearly understand the mechanism of multicomponent ALD growth of oxide semiconductor materials, several variations in the precursor-reactant deposition cycles were evaluated. Gallium could be doped into the oxide film at 200 °C when accompanied by an InCA-1 pulse, and no growth of gallium oxide was observed without the simultaneous deposition of indium oxide.

Formation of Germa-ketenimine on the Ge(100) Surface by Adsorption of tert-Butyl Isocyanide.

Reactions of the (100) surfaces of Ge and Si with organic molecules have been generally understood within the concept of "dimers" formed by the 2 × 1 surface reconstruction. In this work, the adsorption of tert-butyl isocyanide on the Ge(100)-2 × 1 surface at large exposures is investigated under ultrahigh vacuum conditions. A combination of infrared spectroscopy, X-ray photoelectron spectroscopy, and temperature-programmed desorption experiments along with dispersion-corrected density functional theory calculations is used to determine the surface products.

Atomic layer deposition of 1D and 2D nickel nanostructures on graphite.

One-dimensional (1D) nanowires (NWs) and two-dimensional (2D) thin films of Ni were deposited on highly ordered pyrolytic graphite (HOPG) by atomic layer deposition (ALD), using NH as a counter reactant. Thermal ALD using NH gas forms 1D NWs along step edges, while NH plasma enables the deposition of a continuous 2D film over the whole surface. The lateral and vertical growth rates of the Ni NWs are numerically modeled as a function of the number of ALD cycles.

Self-assembly of acetate adsorbates drives atomic rearrangement on the Au(110) surface.

Weak inter-adsorbate interactions are shown to play a crucial role in determining surface structure, with major implications for its catalytic reactivity. This is exemplified here in the case of acetate bound to Au(110), where the small extra energy of the van der Waals interactions among the surface-bound groups drives massive restructuring of the underlying Au. Acetate is a key intermediate in electro-oxidation of CO and a poison in partial oxidation reactions.

Unidirectional Adsorption of Bifunctional 1,4-Phenylene Diisocyanide on the Ge(100)-2 × 1 Surface.

Adsorption of bifunctional organic molecules on semiconductor surfaces is important for surface modification; however, most bifunctional molecules previously studied have yielded mixtures of singly and dually tethered adsorbates. Here we report the adsorption of bifunctional 1,4-phenylene diisocyanide (PDI) on the Ge(100)-2 × 1 surface, in which singly bound adsorbates are selectively produced. As shown by polarized multiple internal reflection infrared spectroscopy experiments and density functional theory calculations, PDI adsorbates form a single C-dative bonding configuration through one of the isocyanide functionalities, retaining one unreacted isocyanide moiety per adsorbate.

Strong carbon-surface dative bond formation by tert-butyl isocyanide on the Ge(100)-2 × 1 surface.

Carbon dative bond formation between an organic molecule and a semiconductor surface is reported here for the first time. Our studies show that the adsorption of tert-butyl isocyanide on the (100) surface of germanium, measured using Fourier transform infrared spectroscopy, temperature-programmed desorption, and density functional theory calculations, occurs via formation of a dative bond to the surface through the isocyanide carbon. The experimentally observed adsorption energy of 26.

In Vacuo Photoemission Studies of Platinum Atomic Layer Deposition Using Synchrotron Radiation.

The mechanism of platinum atomic layer deposition using (methylcyclopentadienyl)trimethylplatinum and oxygen is investigated with in vacuo photoemission spectroscopy at the Stanford Synchrotron Radiation Lightsource. With this surface-sensitive technique, the surface species following the Pt precursor half cycle and the oxygen counter-reactant half cycle can be directly measured. We observed significant amounts of carbonaceous species following the Pt precursor pulse, consistent with dehydrogenation of the precursor ligands.