An Experimental Study on the Thermal Stability of MgSi/Ni Interface under Thermal Cycling.

MgSi is a promising eco-friendly thermoelectric material, and Ni is suited for electrical contact on it. In this study, Bi-doped MgSi ingots with Ni contacts were fabricated by co-sintering, and thermal stability was investigated by long-time (500 h, 500 cycles) temperature cycling from 25 °C to a peak temperature ( = 400 and 450 °C) in N. The as-sintered Ni/MgSi interfacial region is a multilayer consisting of MgBi, a series of MgSiNi ternary compounds (ω, ν, ζ, and η-phases), and MgNi.

Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors.

Perhydropolysilazane (PHPS), an inorganic polymer composed of Si-N and Si-H, has attracted much attention as a precursor for gate dielectrics of thin-film transistors (TFTs) due to its facile processing even at a relatively low temperature. However, an in-depth understanding of the tunable dielectric behavior of PHPS-derived dielectrics and their effects on TFT device performance is still lacking. In this study, the PHPS-derived dielectric films formed at different annealing temperatures have been used as the gate dielectric layer for solution-processed indium zinc oxide (IZO) TFTs.

Surface Plasmon Resonance-Enhanced Near-Infrared Absorption in Single-Layer MoS with Vertically Aligned Nanoflakes.

The development of MoS with two- or three-dimensional heterostructures can provide a significant breakthrough for the enhancement of photodetection abilities such as increase in light absorption and expanding the detection ranges. Till date, although the synthesis of a MoS layer with three-dimensional nanostructures using a chemical vapor deposition (CVD) process has been successfully demonstrated, most studies have concentrated on electrochemical applications that utilize structural strengths, for example, a large specific surface area and electrochemically active sites. Here, for the first time, we report spectral light absorption induced by plasmon resonances in single-layer MoS (SL-MoS) with vertically aligned nanoflakes grown by a CVD process.

Highly Sensitive and Flexible Strain-Pressure Sensors with Cracked Paddy-Shaped MoS/Graphene Foam/Ecoflex Hybrid Nanostructures.

Three-dimensional graphene porous networks (GPNs) have received considerable attention as a nanomaterial for wearable touch sensor applications because of their outstanding electrical conductivity and mechanical stability. Herein, we demonstrate a strain-pressure sensor with high sensitivity and durability by combining molybdenum disulfide (MoS) and Ecoflex with a GPN. The planar sheets of MoS bonded to the GPN were conformally arranged with a cracked paddy shape, and the MoS nanoflakes were formed on the planar sheet.

High Durability and Waterproofing rGO/SWCNT-Fabric-Based Multifunctional Sensors for Human-Motion Detection.

Wearable strain-pressure sensors for detecting electrical signals generated by human activities are being widely investigated because of their diverse potential applications, from observing human motion to health monitoring. In this study, we fabricated reduced graphene oxide (rGO)/single-wall carbon nanotube (SWCNT) hybrid fabric-based strain-pressure sensors using a simple solution process. The structural and chemical properties of the rGO/SWCNT fabrics were characterized using scanning electron microscopy (SEM), Raman, and X-ray photoelectron spectroscopy (XPS).

Roll-to-Roll Production of Layer-Controlled Molybdenum Disulfide: A Platform for 2D Semiconductor-Based Industrial Applications.

A facile methodology for the large-scale production of layer-controlled MoS layers on an inexpensive substrate involving a simple coating of single source precursor with subsequent roll-to-roll-based thermal decomposition is developed. The resulting 50 cm long MoS layers synthesized on Ni foils possess excellent long-range uniformity and optimum stoichiometry. Moreover, this methodology is promising because it enables simple control of the number of MoS layers by simply adjusting the concentration of (NH ) MoS .

Enhanced thermoelectric properties of AgSbTe obtained by controlling heterophases with Ce doping.

We report the enhanced thermoelectric properties of Ce-doped AgSbTe (AgSbCeTe) compounds. As the Ce contents increased, the proportion of heterophase AgTe in the AgSbTe gradually decreased, along with the size of the crystals. The electrical resistivity and Seebeck coefficient were dramatically affected by Ce doping and the lattice thermal conductivity was reduced.

AC-Impedance Spectroscopic Analysis on the Charge Transport in CVD-Grown Graphene Devices with Chemically Modified Substrates.

A comprehensive study for the effect of interfacial buffer layers on the electrical transport behavior in CVD-grown graphene based devices has been performed by ac-impedance spectroscopy (IS) analysis. We examine the effects of the trap charges at graphene/SiO interface on the total capacitance by introducing self-assembled monolayers (SAMs). Furthermore, the charge transports in the polycrystalline graphene are characterized through the temperature-dependent IS measurement, which can be explained by the potential barrier model.

Deposition of n-Type Bi2Te3 Thin Films on Polyimide by Using RF Magnetron Co-Sputtering Method.

Bi2Te3 thermoelectric thin films were deposited on the flexible polyimide substrates by RF magnetron co-sputtering of a Bi and a Te targets. The influence of the substrate temperature and RF power on the microstructure, chemical composition, and the thermoelectric properties of the sputtered films was investigated by using scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, and in-plane resistivity/Seebeck coefficient measurement. It was shown that the thermoelectric properties of the films depend sensitively on the Bi/Te chemical composition ratio and the substrate temperature, and the layered structure was clearly observed from the cross section of the (00L)-oriented, nearly stoichiometric Bi2Te3 films when the substrate temperature is higher than 250 °C.

Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric.

Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene.

Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor.

Graphene barristors are a novel type of electronic switching device with excellent performance, which surpass the low on-off ratios that limit the operation of conventional graphene transistors. In barristors, a gate bias is used to vary graphene's Fermi level, which in turn controls the height and resistance of a Schottky barrier at a graphene/semiconductor heterojunction. Here we demonstrate that the switching characteristic of a thin-film ZnO/graphene device with simple geometry results from tunneling current across the Schottky barriers formed at the ZnO/graphene heterojunctions.

High-mobility ambipolar ZnO-graphene hybrid thin film transistors.

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.