Theoretical Investigation of Rhodium-Decorated Gallium Nitride Nanotubes for Sulfur Hexafluoride Decomposition Products Sensing and Scavenging Applications.

Gas-insulated switchgear (GIS) plays an important role as a modern power distribution device in power plants and power stations, which is commonly filled with SF insulating gas. During the equipment operation, the inevitable partial discharge causes SF to be broken down into gas (SF, SOF, SO, and HS), which degrades the insulation performance of the GIS. This paper is devoted to the detection of partial discharge and the removal of SF and SOF, which are not conducive to insulation, by exploring new gas-sensing materials for characteristic gas detection.

Defect Engineering in Thickness-Controlled BiOSe-Based Transistors by Argon Plasma Treatment.

We present a simple, effective, and controllable method to uniformly thin down the thickness of as-exfoliated two-dimensional BiOSe nanoflakes using Ar plasma treatment. Atomic force microscopy (AFM) images and Raman spectra indicate that the surface morphology and crystalline quality of etched BiOSe nanoflakes remain almost unaffected. X-ray photoelectron spectra (XPS) indicate that the O and Se vacancies created during Ar plasma etching on the top surface of BiOSe nanoflakes are passivated by forming an ultrathin oxide layer with UV O treatment.

A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode-Oxide-Semiconductor Field Effect Transistor.

In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found. The present work reports the observation of the electrical and optoelectronic characteristics of a graphene/polycrystalline silicon junction and explores one possible usage of the junction. The current-voltage curve of the junction was measured to show the typical exponential behavior that can be seen in a forward biased diode, and the photovoltage of the junction showed a logarithmic dependence on light intensity.