Effect of astaxanthin and carvacrol co-encapsulated emulsion and chitosan on the physicochemical, rheological, and antimicrobial properties in nitrite-free meat spread.

The quality and safety of meat products are critical concerns in the food industry, and consumer demand for clean-label products is increasing. To meet these needs, this study aimed to develop a nitrite-free meat spread using an astaxanthin (0.04 wt%) and carvacrol (15 wt%) co-encapsulated emulsion (AE) and chitosan.

BMP10 functions independently from BMP9 for the development of a proper arteriovenous network.

Hereditary hemorrhagic telangiectasia (HHT) is a genetic vascular disorder characterized by the presence of arteriovenous malformation (AVM) in multiple organs. HHT is caused by mutations in genes encoding major constituents for transforming growth factor-β (TGF-β) family signaling: endoglin (ENG), activin receptor-like kinase 1 (ALK1), and SMAD4. The identity of physiological ligands for this ENG-ALK1 signaling pertinent to AVM formation has yet to be clearly determined.

Genetic Variants and Clinical Phenotypes in Korean Patients With Hereditary Hemorrhagic Telangiectasia.

Objectives: Hereditary hemorrhagic telangiectasia (HHT) is an autosomal dominant vascular disorder characterized by recurrent epistaxis, telangiectasia, and visceral arteriovenous malformations (AVMs). Activin A receptor-like type 1 (ACVRL1/ALK1) and endoglin (ENG) are the principal genes whose mutations cause HHT. No multicenter study has yet investigated correlations between genetic variations and clinical outcomes in Korean HHT patients.

Thermal processing under oxygen-free condition of blueberry puree: Effect on anthocyanin, ascorbic acid, antioxidant activity, and enzyme activities.

The effect of thermal treatment of blueberry was investigated using a designed grinding and continuous packaging system under oxygen-free conditions. The grinding, packaging, and heating at 90 °C for 30 min under anaerobic condition were compared to heating under aerobic conditions, showing complete inactivation of oxidative enzymes. Heating without oxygen retained anthocyanins and ascorbic acid whereas heating in atmospheric air does not.

Prevalence and clinical features of bone morphogenetic protein receptor type 2 mutation in Korean idiopathic pulmonary arterial hypertension patients: The PILGRIM explorative cohort.

Background: Pulmonary arterial hypertension (PAH) is a progressive chronic disease with poor outcomes. One reason for poor prognosis is the lack of understanding regarding individual variability in response to treatment. Idiopathic PAH (IPAH) patients with bone morphogenetic protein receptor type 2 (BMPR2) mutations have distinct phenotypes that are crucial for individualized therapy but evidence regarding their prevalence and clinical features in the Korean population is lacking.

Pneumococcal pep27 mutant immunization suppresses allergic asthma in mice.

Asthma is an allergic airway disease (AAD) characterized by eosinophilic inflammation, mucus hypersecretion, and airway hyper responsiveness, and it is caused by dysregulated immune responses. Conversely, regulatory T cells (Tregs) control aberrant immune responses and maintain homeostasis. Recent evidence suggests that Streptococcus pneumoniae, including its components as well as a live attenuated mutant, and pneumococcal infection induce Tregs and can thus potentially be harnessed therapeutically for asthma treatment.

Design Optimization of InGaAs/GaAsSb-Based -Type Gate-All-Around Arch-Shaped Tunneling Field-Effect Transistor.

In this work, an InGaAs/GaAsSb-based -type gate-all-around (GAA) arch-shaped tunneling fieldeffect transistor (TFET) was designed and analyzed using technology computer-aided design (TCAD) simulations. The device performance was investigated in views of the on-state current (), subthreshold swing (), and / ratio. For high current drivability, InGaAs/GaAsSb heterojunction is used to form the broken bandgap.

Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETs.

This paper report a junctionless fin-type field-effect-transistor based capacitorless dynamic random access memory using three-dimensional technology computer-aided design simulations. The proposed 1T-DRAM is made up of a silicon germanium storage region surrounding a silicon fin. When the two materials form a heterojunction, a potential well is formed by the band discontinuity which carriers can be stored.

Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field-Effect Transistors.

The effect of interface traps on InGaAs-based vertical gate-all-around (GAA) tunneling field-effect transistors (TFETs) has been investigated using technology computer-aided design (TCAD) simulation. The interface traps distributed within different energy levels () in the energy bandgap of a semiconductor material exhibit various influences on the device performances. In this work, InGaAs-based TFETs are simulated to analyze the effects on the on-state current (), off-state current (), threshold voltage (), subthreshold swing (), and the ambipolar characteristics according to and type of the interface traps.

Capacitorless One-Transistor Dynamic Random-Access Memory Based on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Si/SiGe Heterojunction and Underlap Structure for Improvement of Sensing Margin and Retention Time.

We present a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a Si/SiGe heterojunction double-gate MOSFET. In the proposed 1T-DRAM, the program process is based on band-to-band tunneling (BTBT) between gate 1 and gate 2 regions, and a sensing margin is defined by the amount of excess holes stored in the SiGe body region. Therefore, the sensing margin and retention time were affected by SiGe in the body region.

Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back Barriers.

In this study, the effect of an AlGaN back-barrier on the electrical characteristics of InAlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The dependence of the thickness and the Al composition of the AlGaN back-barrier on the off-state current (I) of the devices was investigated. An InAlGaN/GaN HEMT with an AlGaN back-barrier of thickness 20 nm exhibited lower because of the carrier confinement effect, which was caused by the back-barrier.

Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor.

In this study, one-transistor dynamic random-access memory (1T-DRAM) based on a symmetric double-gate Si junctionless transistor is proposed using technology computer-aided design simulation. The proposed device uses double gates that play different roles in realizing 1T-DRAM operation. Gate 1 is used as a switching node, and Gate 2 is used as a storage node.

CXCL12-CXCR4 signalling plays an essential role in proper patterning of aortic arch and pulmonary arteries.

Aims: Chemokine CXCL12 (stromal derived factor 1: SDF1) has been shown to play important roles in various processes of cardiovascular development. In recent avian studies, CXCL12 signalling has been implicated in guidance of cardiac neural crest cells for their participation in the development of outflow tract and cardiac septum. The goal of this study is to investigate the extent to which CXCL12 signalling contribute to the development of aortic arch and pulmonary arteries in mammals.

Enhanced electrical properties of reduced graphene oxide multilayer films by in-situ insertion of a TiO2 layer.

Wrinkle-free reduced graphene oxide (rGO)/TiO(2) hybrid multilayer films were directly fabricated using an rGO solution stabilized by a TiO(2) precursor sol applied over a large area by an air spraying method without the use of additional reduction processes. In-situ insertion of the TiO(2) layer between rGO sheets dramatically increased the conductivity and carrier mobility despite the insulating properties of amorphous TiO(2). The TiO(2) situated between rGO sheets also induced significant hole doping.

Titania-assisted dispersion of carboxylated single-walled carbon nanotubes in a ZnO sol for transparent conducting hybrid films.

We report a facile chemical route for stabilizing a dispersion of carboxylated single-walled carbon nanotubes (SWCNTs) in a ZnO sol. The dispersion is stabilized via capping of the carboxyl groups on the SWCNT surface by a titania layer, which was confirmed by Fourier transform infrared spectroscopy and transmission electron microscopy. We also demonstrate that the conductivity of the films prepared from the SWCNT/TiO(x)/ZnO sol is dramatically enhanced by thermal treatment and that the thermal stability of the hybridized films with the ZnO sol is notably improved relative to that of a pristine SWCNT film.

The adsorption of mercury-species on relaxed and rumpled CaO (0 0 1) surfaces investigated by density functional theory.

This research examines the importance of several computational choices in modeling mercury species adsorption on calcium oxide surfaces and is the second in a series of papers. The importance of surface relaxation was tested and it was found that adsorption energies changed for HgCl(2), moving adsorption from being at the borderline of physisorption and chemisorption to being strongly chemisorbed. Results for Hg and HgCl were unaffected.

Adsorption energies of mercury-containing species on CaO and temperature effects on equilibrium constants predicted by density functional theory calculations.

The adsorption of Hg, HgCl, and HgCl2 on the CaO surface was investigated theoretically so the fundamental interactions between Hg species and this potential sorbent can be explored. Surface models of a 4 x 4 x 2 cluster, a 5 x 5 x 2 cluster, and a periodic structure using density functional theory calculations with LDA/PWC and GGA/BLYP functionals, as employed in the present work, offer a useful description for the thermodynamic properties of adsorption on metal oxides. The effect of temperature on the equilibrium constant for the adsorption of mercury-containing species on the CaO (0 0 1) surface was investigated with GGA/BLYP calculations in the temperature range of 250-600 K.