Photoelectric Properties of GaSSe (0 ≤ ≤ 1) Layered Crystals.

In this study, the photoelectric properties of a complete series of GaSSe (0 ≤ ≤ 1) layered crystals are investigated. The photoconductivity spectra indicate a decreasing bandgap of GaSSe as the Se composition increases. Time-resolved photocurrent measurements reveal a significant improvement in the response of GaSSe to light with increasing .

Facile synthesis of-GaObased high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides.

Gallium oxide (GaO) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizing-GaOvia direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in x-ray diffraction patterns and full surface coverage formation in scanning electron microscopy images after annealing were achieved.

Enhanced Optical Response of Zinc-Doped Tin Disulfide Layered Crystals Grown with the Chemical Vapor Transport Method.

Tin disulfide (SnS) is a promising semiconductor for use in nanoelectronics and optoelectronics. Doping plays an essential role in SnS applications, because it can increase the functionality of SnS by tuning its original properties. In this study, the effect of zinc (Zn) doping on the photoelectric characteristics of SnS crystals was explored.