Thermionic Emission in Artificially Structured Single-Crystalline Elemental Metal/Compound Semiconductor Superlattices.

Metal/semiconductor superlattices represent a fascinating frontier in materials science and nanotechnology, where alternating layers of metals and semiconductors are precisely engineered at the atomic and nano-scales. Traditionally, epitaxial metal/semiconductor superlattice growth requires constituent materials from the same family, exhibiting identical structural symmetry and low lattice mismatch. Here, beyond this conventional constraint, a novel class of epitaxial lattice-matched metal/semiconductor superlattices is introduced that utilizes refractory hexagonal elemental transition metals and wide-bandgap III-nitride semiconductors.

Electron confinement-induced plasmonic breakdown in metals.

Plasmon resonance represents the collective oscillation of free electron gas density and enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the classical Drude model describes plasmonic excitation, wherein plasma frequency exhibits no spatial dispersion. Here, we show conclusive experimental evidence of the breakdown of plasmon resonance and a consequent metal-insulator transition in an ultrathin refractory plasmonic material, hafnium nitride (HfN).

Flexible Near-Infrared Plasmon-Polaritons in Epitaxial Scandium Nitride Enabled by van der Waals Heteroepitaxy.

Van der Waals heteroepitaxy refers to the growth of strain- and misfit-dislocation-free epitaxial films on layered substrates or vice versa. Such heteroepitaxial technique can be utilized in developing flexible near-infrared transition metal nitride plasmonic materials to broaden their photonic and bioplasmonic applications, such as antifogging, smart windows, and bioimaging. Here, we show the first conclusive experimental demonstration of the van der Waals heteroepitaxy-enabled flexible semiconducting scandium nitride (ScN) thin films exhibiting near-infrared, low-loss epsilon-near-zero, and surface plasmon-polariton resonances.

Magnetic Stress-Driven Metal-Insulator Transition in Strongly Correlated Antiferromagnetic CrN.

Traditionally, the Coulomb repulsion or Peierls instability causes the metal-insulator phase transitions in strongly correlated quantum materials. In comparison, magnetic stress is predicted to drive the metal-insulator transition in materials exhibiting strong spin-lattice coupling. However, this mechanism lacks experimental validation and an in-depth understanding.

Reversal of Band-Ordering Leads to High Hole Mobility in Strained -type Scandium Nitride.

Low hole mobility of nitride semiconductors is a significant impediment to realizing their high-efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band gap semiconductor, suffers from low hole mobility. Utilizing the Boltzmann transport formalism including spin-orbit coupling, here we show the dominating role of ionized impurity scattering in reducing the hole mobility in ScN thin films.

A photonic artificial synapse with a reversible multifaceted photochromic compound.

Modern computational technology based on the von Neumann architecture physically partitions memory and the central processing unit, resulting in fundamental speed limitations and high energy consumption. On the other hand, the human brain is an extraordinary multifunctional organ composed of more than a billion neurons capable of simultaneously thinking, processing, and storing information. Neurons are interconnected with synapses that control information flow from pre-synaptic-to-post-synaptic neurons.

Morphology-Controlled Reststrahlen Band and Infrared Plasmon Polariton in GaN Nanostructures.

Due to ultrabright and stable blue light emission, GaN has emerged as one of the most famous semiconductors of the modern era, useful for light-emitting diodes, power electronics, and optoelectronic applications. Extending GaN's optical resonance from visible to mid- and-far-infrared spectral ranges will enable novel applications in many emerging technologies. Here we show hexagonal honeycomb-shaped GaN nanowall networks and vertically standing nanorods exhibiting morphology-dependent Reststrahlen band and plasmon polaritons that could be harnessed for infrared nanophotonics.

Refractory Plasmonic Hafnium Nitride and Zirconium Nitride Thin Films as Alternatives to Silver for Solar Mirror Applications.

Harnessing solar energy by employing concentrated solar power (CSP) systems requires materials with high electrical conductivity and optical reflectivity. Silver, with its excellent optical reflectance, is traditionally used as a reflective layer in solar mirrors for CSP technologies. However, silver is soft and expensive, quickly tarnishes, and requires a protective layer of glass for practical applications.

Polar Semiconducting Scandium Nitride as an Infrared Plasmon and Phonon-Polaritonic Material.

The interaction of light with collective charge oscillations, called plasmon-polariton, and with polar lattice vibrations, called phonon-polariton, are essential for confining light at deep subwavelength dimensions and achieving strong resonances. Traditionally, doped-semiconductors and conducting metal oxides (CMO) are used to achieve plasmon-polaritons in the near-to-mid infrared (IR), while polar dielectrics are utilized for realizing phonon-polaritons in the long-wavelength IR (LWIR) spectral regions. However, demonstrating low-loss plasmon- and phonon-polaritons in one host material will make it attractive for practical applications.

Charge Transfer in the Heterostructure of CsPbBr Nanocrystals with Nitrogen-Doped Carbon Dots.

Heterostructures of inorganic halide perovskites with mixed-dimensional inorganic nanomaterials have shown great potential not only in the field of optoelectronic energy devices and photocatalysis but also for improving our fundamental understanding of the charge transfer across the heterostructure interface. Herein, we present for the first time the heterostructure integration of the CsPbBr nanocrystal with an N-doped carbon dot. We explore the photoluminescence (PL) and photoconductivity of the heterostructure of CsPbBr nanocrystals and N-doped carbon dots.

A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.

Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously.

Dislocation-pipe diffusion in nitride superlattices observed in direct atomic resolution.

Device failure from diffusion short circuits in microelectronic components occurs via thermally induced migration of atoms along high-diffusivity paths: dislocations, grain boundaries, and free surfaces. Even well-annealed single-grain metallic films contain dislocation densities of about 10 m; hence dislocation-pipe diffusion (DPD) becomes a major contribution at working temperatures. While its theoretical concept was established already in the 1950s and its contribution is commonly measured using indirect tracer, spectroscopy, or electrical methods, no direct observation of DPD at the atomic level has been reported.

Epitaxial superlattices with titanium nitride as a plasmonic component for optical hyperbolic metamaterials.

Titanium nitride (TiN) is a plasmonic material having optical properties resembling gold. Unlike gold, however, TiN is complementary metal oxide semiconductor-compatible, mechanically strong, and thermally stable at higher temperatures. Additionally, TiN exhibits low-index surfaces with surface energies that are lower than those of the noble metals which facilitates the growth of smooth, ultrathin crystalline films.

Thermoelectric properties of HfN/ScN metal/semiconductor superlattices: a first-principles study.

Nitride-based metal/semiconductor superlattices are promising candidates for high-temperature thermoelectric applications. Motivated by recent experimental studies, we perform first-principles density functional theory based analysis of electronic structure, vibrational spectra and transport properties of HfN/ScN metal/semiconductor superlattices for their potential applications in thermoelectric and thermionic energy conversion devices. Our results suggest (a) an asymmetric linearly increasing density of states and (b) flattening of conduction bands along the cross-plane Γ-Z direction near the Fermi energy of these superlattices, as is desirable for a large power factor.