Numerical evaluation and optimization of high sensitivity CuCdSnSe photodetector.

Copper cadmium tin selenide (CuCdSnSe) based photodetector (PD) has been explored with the solar cell capacitance simulator (SCAPS-1D). Herein, cadmium sulfide (CdS) and molybdenum disulfide (MoS) are used as a window and back surface field (BSF) layers, respectively. The physical attributes, such as width, carrier density and bulk defects have been adjusted to attain the optimal conditions.

Numerical Expedition on the Potential of AgBiS-Based Thin Film Solar Cells Employing Different Carrier Transport Layers.

In this study, a photovoltaic (PV) device has been developed by using AgBiS as the key material. The simulation of the photovoltaic cell has been performed using the SCAPS-1D simulator to analyze the impact of each layer. The design incorporates three window layers, CdS, InS, and ZnSe, alongside six familiar compounds, AlSb, CuGaSe (CGS), CuS, MoS, SbS, and WSe, as the back surface field (BSF) layers.

Numerical studies on a ternary AgInTe chalcopyrite thin film solar cell.

This paper theoretically outlines a new -AlSb/-AgInTe/-BaSi solar cell. The dominance of several factors such as depth, carrier density and defects of every layer on the photovoltaic (PV) outcome has been ascertained applying Solar Cell Capacitance Simulator (SCAPS)-1D computer-based simulator. The AgInTe (AIT) solar cell has been probed for finding the role of BaSi as a back surface field (BSF) layer.

Theoretical insights into a high-efficiency SbSe-based dual-heterojunction solar cell.

Here, we manifest the design and simulation of an -ZnSe/-SbSe/ -AgInTe dual-heterojunction (DH) solar cell which exhibits a prominent efficiency. The performance of the solar cell has been assessed with reported experimental parameters using SCAPS-1D simulator by varying thickness, doping concentration and defect density in each layer. The proposed structure shows an efficiency of 38.

Stress-induced phase-alteration in solution processed indium selenide thin films during annealing.

This article demonstrates the successful synthesis of indium selenide thin films by a spin coating method in air using thiol-amine cosolvents. The synthesized films encountered a transformation from β-InSe to γ-InSe phase due to mechanical stress during annealing as confirmed from XRD and EDS analysis. The SEM study ensured the homogeneity and uniformity of surface morphology of both phases.

Synthesis of Self-Assembled Randomly Oriented VO Nanowires on a Glass Substrate by a Spin Coating Method.

Randomly oriented vanadium dioxide (VO) nanowires were produced on a glass substrate by spin coating from a cosolvent. SEM studies reveal that highly dense VO nanowires were grown at an annealing temperature of 400 °C. X-ray diffraction (XRD) provides evidence of the high crystallinity of the VO nanowires-embedded VO thin films on the glass substrate at 400 °C.

Electronic Structure of In Se Electron Transport Layer for Chalcogenide/p-Si Heterojunction Solar Cells.

In this article, we perform density functional theory calculation to investigate the electronic and optical properties of newly reported In Se compound using CAmbridge Serial Total Energy Package (CASTEP). Structural parameters obtained from the calculations agree well with the available experimental data, indicating their stability. In the band structure of In Se ( = 0, 0.