Atomic to nanoscale chemical fluctuations: The catalyst for enhanced thermoelectric performance in high-entropy materials.

High-entropy materials have expanded the frontier for discovering uncharted physicochemical properties. The phenomenon of chemical fluctuation is ubiquitous in high-entropy materials, yet its role in the thermoelectric field is often overlooked. Herein, we designed and synthesized a series of (MgYbSrZn)(MgCdZnNa)(SbCa) samples characterized by ultrahigh configurational entropy.

Strategic Design and Mechanistic Understanding of Vacancy-Filling Heusler Thermoelectric Semiconductors.

Doping narrow-gap semiconductors is a well-established approach for designing efficient thermoelectric materials. Semiconducting half-Heusler (HH) and full-Heusler (FH) compounds have garnered significant interest within the thermoelectric field, yet the number of exceptional candidates remains relatively small. It is recently shown that the vacancy-filling approach is a viable strategy for expanding the Heusler family.