Mechanoluminescence (ML) materials, known for their ability to convert mechanical energy into light, are increasingly recognized for their potential applications, such as in intelligent stress sensing, in vivo bioimaging, and stress non-destructive monitoring. However, the low signal-to-noise ratio (SNR) and narrow-band emission of single-defect-induced ML materials usually limit their biological-related practical applications. Here, these limitations will be addressed by modulating the microstructure evolution in YGaMgSiO:Cr through the [Si+Mg] → [Ga+Ga] chemical substitution strategy.
View Article and Find Full Text PDFMechanoluminescence (ML) materials are featured with the characteristic of "force to light" in response to external stimuli, which have made great progress in artificial intelligence and optical sensing. However, how to effectively enable ML in the material is a daunting challenge. Here, a LuAlGaO:Cr (LAGO: Cr) near infrared (NIR) ML material peaked at 706 nm is reported, which successfully realizes the key to unlock ML by the lattice-engineering strategy Ga substitution for Al to "grow" oxygen vacancy (O) defects.
View Article and Find Full Text PDFMechanoluminescence (ML) materials have found potential applications in information storage, anti-counterfeiting, and stress sensing. Conventional stress sensing based on absolute ML intensity is prone to significant mistakes owing to the unpredictability of measurement surroundings. However, implementing a ratiometric ML sensing technique may considerably ameliorate this issue.
View Article and Find Full Text PDFAn activator's selective occupation of a host is of great significance for designing high-quality white light-emitting diode phosphors, while achieving a full-spectrum single-phase white light emission phosphor is challenging. In this study, a boron phosphate solid-solution NaY(BO)(PO)O:0.005 Bi (NYBPO:0.
View Article and Find Full Text PDF