Enhancing UV photodetection performance of an individual ZnO microwire p-n homojunction interfacial engineering.

As a typical broad bandgap semiconductor, ZnO has received considerable attention for developing optoelectronic devices in ultraviolet wavelengths, but suffers from a lack of high-quality single-crystalline p-type ZnO. Herein, we report the realization of a homojunction ultraviolet photodetector, which involves a p-type Sb-doped ZnO microwire (ZnO:Sb MW) and n-type ZnO layer. The p-type conductivity of the as-synthesized ZnO:Sb MWs was evidenced using an individual wire field-effect transistor.