Orientation-Selective Memory Switching in Quasi-1D NbSe Neuromorphic Device for Omnibearing Motion Detection.

Intelligent neuromorphic hardware holds considerable promise in addressing the growing demand for massive real-time data processing in edge computing. Resistive switching materials with intrinsic anisotropy and a compact design of non-volatile memory devices with the capability of handling spatiotemporally reconstructed data is crucial to perform sophisticated tasks in complex application scenarios. In this study, an anisotropic resistive switching cell with a planar configuration based on lithiated NbSe nanosheets is demonstrated.