Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors.

The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (I) via trap-assisted tunneling when the gate voltage (V) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient.

A negative electrocaloric effect in an antiferroelectric zirconium dioxide thin film.

A large negative electrocaloric effect is demonstrated in an antiferroelectric ZrO thin film with 8 nm thickness deposited by atomic layer deposition. An adiabatic temperature change as high as ΔT = -31 K is obtained for an electric field change of ΔE = 3.45 MV cm at an ambient temperature of 413 K.