Analysis and Modeling of an 11.8 GHz Fin Resonant Body Transistor in a 14 nm FinFET CMOS Process.

In this work, a compact model is presented for a 14-nm CMOS-based fin resonant body transistor (fRBT) operating at a frequency of 11.8 GHz and targeting radio frequency (RF) generation/filtering for next-generation radio communication, clocking, and sensing applications. Analysis of the phononic dispersion characteristics of the device, which informs the model development, shows the presence of displacement component coupling due to the periodic nature of the back-end-of-line (BEOL) metal phononic crystal (PnC).

A tunable ferroelectric based unreleased RF resonator.

This paper introduces the first tunable ferroelectric capacitor (FeCAP)-based unreleased RF MEMS resonator, integrated seamlessly in Texas Instruments' 130 nm Ferroelectric RAM (FeRAM) technology. The designs presented here are monolithically integrated in solid-state CMOS technology, with no post-processing or release step typical of other MEMS devices. An array of FeCAPs in this complementary metal-oxide-semiconductor (CMOS) technology's back-end-of-line (BEOL) process were used to define the acoustic resonance cavity as well as the electromechanical transducers.

Temperature coefficient of frequency modeling for CMOS-MEMS bulk mode composite resonators.

CMOS-MEMS resonators, which are promising building blocks for achieving monolithic integration of MEMS structure, can be used for timing and filtering applications, and control circuitry. SiO2 has been used to make MEMS resonators with quality factor Q > 10(4), but temperature instability remains a major challenge. In this paper, a design that uses an embedded metal block for temperature compensation is proposed and shows sub-ppm temperature stability (-0.